CEM4955
Dual P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 D1 D2 D2 8765
SO-8
1
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM ...
