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VSD080N06MS

Vanguard Semiconductor
Part Number VSD080N06MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  Pb-free lead plating; Ro...
Datasheet PDF File VSD080N06MS PDF File

VSD080N06MS
VSD080N06MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.
5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSD080N06MS 60V/15A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.
5V ID 60 V 68 mΩ 85 mΩ 15 A TO-252 Part ID Package Type VSD080N06MS TO-252 Marking 080N06 Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID IDM PD IS EAS TJ TSTG Continuous drain current@VGS=10V Pulse drain current tested ① Maximum power dissipation Diode Continuous Forward Current Avalanche energy, single pulsed ② Maxim...


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