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BC516 Datasheet, Equivalent, Darlington Transistor.

PNP Darlington Transistor

PNP Darlington Transistor

 

 

 

Part BC516
Description PNP Darlington Transistor
Feature BC516 BC516 PNP Darlington Transistor
• This device is designed for applica tions reguiring extremely high current gain at currents to 1mA.

• Sourced fr om process 61.
Absolute Maximum Rating s TA=25°C unless otherwise noted Symb ol Parameter VCEO VCBO VEBO IC PD TJ, TSTG Collector-Emitter Voltage Colle ctor-Base Voltage Emitter-Base Voltage Collector Current - Continuous Tota l Power Dissipation TA = 25°C Operatin g and Storage Junction Temperature Rang e 1 TO-92 1.
Collector 2.
Base 3.
Emit ter Value 30 40 10 1 625 -55 ~ +150 U nits V V V A mW °C Electrical Charact eristics TA=25°C unle .
Manufacture Fairchild Semiconductor
Datasheet
Download BC516 Datasheet
Part BC516
Description PNP Darlington Transistor
Feature BC516 BC516 PNP Darlington Transistor
• This device is designed for applica tions reguiring extremely high current gain at currents to 1mA.

• Sourced fr om process 61.
Absolute Maximum Rating s TA=25°C unless otherwise noted Symb ol Parameter VCEO VCBO VEBO IC PD TJ, TSTG Collector-Emitter Voltage Colle ctor-Base Voltage Emitter-Base Voltage Collector Current - Continuous Tota l Power Dissipation TA = 25°C Operatin g and Storage Junction Temperature Rang e 1 TO-92 1.
Collector 2.
Base 3.
Emit ter Value 30 40 10 1 625 -55 ~ +150 U nits V V V A mW °C Electrical Charact eristics TA=25°C unle .
Manufacture Fairchild Semiconductor
Datasheet
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BC516

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