BC516
BC516
PNP Darlington Transistor
This device is designed for applications reguiring extremely high current gain at currents to 1mA.
Sourced from process 61.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VCEO VCBO VEBO IC PD TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector C...
