CSD30N55
N-Channel Trench Power MOSFET
General Description
The CSD30N55 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications.
Features
● VDS = 30V,ID =80A RDS(ON) < 6.5mΩ @ VGS =10V RDS(ON) < 10.5mΩ @ VGS =5V
● High Powe...
