CSD30N55 Power MOSFET Datasheet

CSD30N55 Datasheet, PDF, Equivalent


Part Number

CSD30N55

Description

N-Channel Trench Power MOSFET

Manufacture

CASS

Total Page 6 Pages
Datasheet
Download CSD30N55 Datasheet


CSD30N55
CSD30N55
N-Channel Trench Power MOSFET
General Description
The CSD30N55 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 5V. This device is suitable for use as a
wide variety of applications.
Features
VDS = 30V,ID =80A
RDS(ON) < 6.5mΩ @ VGS =10V
RDS(ON) < 10.5mΩ @ VGS =5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications
Load switch
Power management
100% UIS TESTED!
100% ΔVds TESTED!
Schematic Diagram
Marking and pin Assignment
TO-252(DPAK) top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD30N55
CSD30N55
TO-252
Reel Size
325mm
Tape width
16mm
Quantity
2500
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V
VGS Gate-Source Voltage (VDS=0V)
Drain Current-Continuous(Tc=25) (Note 1)
ID
Drain Current-Continuous(Tc=100)
IDM (pluse)
Drain Current-Continuous@ Current-Pulsed (Note 2)
Maximum Power Dissipation(Tc=25)
PD
Maximum Power Dissipation(Tc=100)
EAS Avalanche energy (Note 3)
TJ,TSTG
Operating Junction and Storage Temperature Range
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Value
30
±20
80
56
320
91
45
270
-55 To 175
Unit
V
V
A
A
A
W
W
mJ
Typ Max Unit
- 1.65 /W
CASS SEMICONDUCTOR CO., LTD
-1-
http://www.casssemi.com
V2.1

CSD30N55
CSD30N55
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
On/Off States
BVDSS Drain-Source Breakdown Voltage
VGS=0V ID=250μA
IDSS Zero Gate Voltage Drain Current
VDS=30V,VGS=0V
IGSS Gate-Body Leakage Current
VGS=±20V,VDS=0V
VGS(th)
gFS
Gate Threshold Voltage
Forward Transconductance
RDS(ON) Drain-Source On-State Resistance
VDS=VGS,ID=250μA
VDS=5V,ID=15A
VGS=10V, ID=20A(Tc=25)
VGS=10V, ID=20A (Tc=125)
VGS=5V, ID=20A
Dynamic Characteristics
Min
30
1.0
Typ
1.5
24
4.5
6
7
Max
1
±100
2.5
6.5
8.5
10.5
Unit
V
μA
nA
V
S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
Switching Times
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=25V,VGS=0V,
f=1.0MHz
VGS=0V, VDS=0V,f=1.0MHz
VGS=10V, VDS=15V,
RL=0.75,RGEN=3
VGS=10V, VDS=25V, ID=14A
2000
228
155
1.3
12
36
49
12
50
3
18
pF
pF
pF
Ω
nS
nS
nS
nS
nC
nC
nC
Source-Drain Diode Characteristics
ISD Source-Drain Current(Body Diode)
VSD Forward on Voltage
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=0V,IS=20A
IF=20A, dI/dt=100A/s
IF=20A, dI/dt=100A/s
80
1.2
13
3.5
A
V
ns
nC
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: TJ=25,VDD=15V,VG=10V, RG=25Ω
CASS SEMICONDUCTOR CO., LTD
-2-
http://www.casssemi.com
V2.1


Features CSD30N55 N-Channel Trench Power MOSFET General Description The CSD30N55 uses advanced trench technology to provide e xcellent RDS(ON), low gate charge and o peration with gate voltages as low as 5 V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =80A RDS(ON) < 6.5mΩ @ VGS =10V RDS(ON) < 10.5mΩ @ VGS =5V ● High Power and current handing cap ability ● Lead free product is acquir ed ● Surface Mount Package Applicatio n ● PWM applications ● Load switch ● Power management 100% UIS TESTED! 1 00% ΔVds TESTED! Schematic Diagram Ma rking and pin Assignment TO-252(DPAK) t op view Package Marking and Ordering I nformation Device Marking Device Dev ice Package CSD30N55 CSD30N55 TO-252 Reel Size 325mm Tape width 16mm Qua ntity 2500 Table 1. Absolute Maximum R atings (TA=25℃) Symbol Parameter V DS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) Drain Cu rrent-Continuous(Tc=25℃) (Note 1) ID Drain Current-Continuous.
Keywords CSD30N55, datasheet, pdf, CASS, N-Channel, Trench, Power, MOSFET, SD30N55, D30N55, 30N55, CSD30N5, CSD30N, CSD30, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)