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CSD60N70

CASS
Part Number CSD60N70
Manufacturer CASS
Description N-Channel Trench Power MOSFET
Published Jun 23, 2018
Detailed Description N-Channel Trench Power MOSFET General Description The CSD60N70 is N-channel MOS Field Effect Transistor designed for hig...
Datasheet PDF File CSD60N70 PDF File

CSD60N70
CSD60N70

Overview
N-Channel Trench Power MOSFET General Description The CSD60N70 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
Features ● VDS=60V；ID=56A@ VGS=10V； RDS(ON)<9.
0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CSD60N70 To-252 Top View Schematic Diagram VDS = 60 V ID = 56A RDS(ON) = 7.
5mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD60N70 CSD60N70 TO-252 Reel Size - Table 1.
Absolute Maximum Ratings (TA=25℃) ...


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