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CSD50N06
N-Channel Trench Power MOSFET
Description
N-Channel Trench Power MOSFET General Description The CSD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Features ā VDS=60V; ID=45A RDS(ON)<15mĪ© @ VGS=10V ā Ultra Low On-Resistance ā High UIS and UIS 100...
CASS
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CSD50N06
N-Channel Trench Power MOSFET
- CASS
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