2007-12-07
GaAlAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0
SFH 483 E7800
Features: Fabricated in a liquid phase epitaxy process Anode is electrically connected to the case
High reliability Matches all Si-Photodetectors Same package as BPX 63, BP 103, LD 242, SFH
464 DIN humidity caregory in acc. with DIN 40 040
GQG
Besondere Merkma...
