HG Semiconductors
2N6166HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR
DESCRIPTION:
The HG 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.
FEATURES:
C = 60 % min. @ 100 W/150 MHz PG = 6.0 dB min. @ 100 W/150 MHz Omnigold™ Metalization System
MAXIMUM RATINGS
IC 9.0 A
VCBO
65 V
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