Purpose Transistor. SBC847BPDXV6 Datasheet

SBC847BPDXV6 Transistor. Datasheet pdf. Equivalent

SBC847BPDXV6 Datasheet
Recommendation SBC847BPDXV6 Datasheet
Part SBC847BPDXV6
Description NPN/PNP Dual General Purpose Transistor
Feature SBC847BPDXV6; BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for.
Manufacture ON Semiconductor
Datasheet
Download SBC847BPDXV6 Datasheet




ON Semiconductor SBC847BPDXV6
BC847BPDXV6,
SBC847BPDXV6
NPN/PNP Dual General
Purpose Transistor
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT563 which is designed for low
power surface mount applications.
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS NPN
Rating
Symbol
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Continuous
VCEO
VCBO
VEBO
IC
45 V
50 V
6.0 V
100 mAdc
MAXIMUM RATINGS PNP
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
45
V
Collector Base Voltage
VCBO
50
V
Emitter Base Voltage
VEBO
5.0
V
Collector Current
Continuous
IC
100
mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD
357 mW
2.9 mW/°C
Thermal Resistance
Junction-to-Ambient (Note 1)
RqJA
°C/W
350
Characteristic
(Both Junctions Heated)
Symbol Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD
500 mW
4.0 mW/°C
Thermal Resistance
Junction-to-Ambient (Note 1)
RqJA
°C/W
250
Junction and Storage Temperature Range TJ, Tstg
1. FR4 @ Minimum Pad
55 to
+150
°C
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 2
1
http://onsemi.com
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
BC847BPDX6T1
654
12 3
SOT563
CASE 463A
MARKING DIAGRAM
4F MG
1G
4F = Specific Device Code
M = Month Code
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BC847BPDXV6T1G SOT563 4 mm pitch
(PbFree) 4000/Tape & Reel
SBC847BPDXV6T1G SOT563 2 mm pitch
(PbFree) 4000/Tape & Reel
BC847BPDXV6T5G SOT563 2 mm pitch
(PbFree) 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
BC847BPDXV6T1/D



ON Semiconductor SBC847BPDXV6
BC847BPDXV6, SBC847BPDXV6
ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
V
45
Collector Emitter Breakdown Voltage
(IC = 10 μA, VEB = 0)
V(BR)CES
V
50
Collector Base Breakdown Voltage
(IC = 10 mA)
V(BR)CBO
V
50
Emitter Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO
V
6.0
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO − − 15 nA
− − 5.0 μA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 μA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
150
200 290 475
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
0.25 V
0.6
Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
mV
− − 770
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT 100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Cobo − − 4.5 pF
NF dB
− − 10
http://onsemi.com
2



ON Semiconductor SBC847BPDXV6
BC847BPDXV6, SBC847BPDXV6
ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA)
V(BR)CEO
Collector Emitter Breakdown Voltage
(IC = 10 μA, VEB = 0)
V(BR)CES
Collector Base Breakdown Voltage
(IC = 10 mA)
V(BR)CBO
Emitter Base Breakdown Voltage
(IE = 1.0 mA)
V(BR)EBO
Collector Cutoff Current (VCB = 30 V)
Collector Cutoff Current (VCB = 30 V, TA = 150°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = 10 μA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)
hFE
Collector Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
Base Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALLSIGNAL CHARACTERISTICS
VBE(sat)
VBE(on)
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cob
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF
Min
45
50
50
5.0
200
0.6
100
Typ Max Unit
V
−−
V
−−
V
−−
V
−−
− −15 nA
− −4.0 μA
150
290 475
− −0.3
− −0.65
0.7
0.9
− −0.75
− −0.82
V
V
V
− − MHz
4.5 pF
10 dB
http://onsemi.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)