2N5362 transistors Datasheet

2N5362 Datasheet, PDF, Equivalent


Part Number

2N5362

Description

Silicon N-channel junction field-effect transistors

Manufacture

ETC

Total Page 6 Pages
Datasheet
Download 2N5362 Datasheet


2N5362
2N5358 (SILICON)
thru
2N5364
Silicon N-channel junction field-effect transistors de-
pletion mode (Type A) devices designed primarily for
general-purpose amplifier applications.
CASE 20
(TO-72)
102
3
4
STYLE 3
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
CASE LEAD
MAXIMUM RATINGS
Rating
Forward Gate Current
Reverse Gate-Source Voltage
Drain-Gate Voltage
Total Device Dissipation @TA =25° C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature Range
Symbol
IG(f)
VGS(r)
VDG
PD
Tstg
TJ
Value Unit
10 mAdc
40 Vdc
40 Vdc
300
2.0
-65 to +200
mW
mW/oC
°c
-65 to +175 °c
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherWise noted)
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(IG = 10 JiAde, Vns = 0)
Gate-Source Cutoff Voltage
(Vns = 15 Vde, ~ = 100 nAdc)
Gate Reverse Current
(VGS = 20 Vde, Vns =0)
(VGS = 20 Vde, Vns =0, TA =150°C)
2N5358
2N5359
2N5360
2N5361
2N5362
2N5363
2N5364
Symbol Min Max Unit
V(BR)GSS
40
- Vde
VGS(off)
IGSS
0.5 3.0
0.8 4.0
0.8 4.0
1.0 6.0
2.0 7.0
2.5 8.0
2.5 8.0
Vde
- nAde
0.1
- 0.1 JiAde
2-144

2N5362
2N5358 thru 2N5364 (continued)
ELECTRICAL CHARACTERISTICS (continued)
I Characteristic
ON CHARACTERISTICS
Zero-Gate Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
'0Gate-Source Voltage
(VDS = 15 Vdc, = 50 /.lAdc)
'0(VDS = 15 Vdc, = 80 /.lAdc)
'0(VDS = 15 Vdc, = 150 /.lAdc)
(VDS = 15 Vdc, ~ = 250 /.lAdc)
(VDS = 15 Vdc, ~ = 400 /.lAdc)
'0(VDS = 15 Vdc, = 700 /.lAdc)
'0(Vns = 15 Vdc, = 900 /.lAdc)
SMALL·SIGNAL CHARACTERISTICS
Forward Transadmittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Forward Transconductance
(VDS = 15 Vdc, VGS = 0 Vdc, f = 100 MHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1. 0 kHz)
Input Capacitance
(VDS =15Vdc, Vas =0, f=1.0MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS=O, f=1.0MHz)
Common-Source Noise Figure
(VDB = 15 Vdc, VGS = 0, RG = 1. 0 Megohm, f = 100 Hz,
BW = 1.0 Hz)
Equivalent Short-Circuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)
2N5358
2N5359
2N5360
2N5361
2N5362
2N5363
2N5364
2N5358
2N5359
2N5360
2N5361
2N5362
2N5363
2N5364
2N5358
2N5359
2N5360
2N5361
2N5362
2N5363
2N5364
2N5358
2N5359
2N5360
2N5361
2N5362
2N5363
2N5364
2N5358, 2N5359
2N5360, 2N5361
2N5362, 2N5363
2N5364
Symbol
~SS
VGS
IYfsl
Re(yf s )
IYosl
Ciss
Crss
NF
en
Min Max Unit
mAdc
0.5 1.0
0.8 1.6
1.5 3.0
2.5 5.0
4.0 8.0
7.0 14
9.0 18
Vdc
0.3 1.5
0.4 2.0
0.5 2.5
1.0 5.0
1.3 5.0
2.0 6.0
2.0 6.0
1000
1200
1400
1500
2000
2500
2700
800
900
1400
1700
1900
2100
2200
-
-
-
-
3000
3600
4200
4500
5500
6000
6500
/.lmnos
/.lmhos
-------
/.lmhos
10
20
40
60
pF
6.0
pF
2.0
dB
2.5
- 115 ~V/JHz
2-145


Features 2N5358 (SILICON) thru 2N5364 Silicon N- channel junction field-effect transisto rs depletion mode (Type A) devices desi gned primarily for general-purpose ampl ifier applications. CASE 20 (TO-72) 10 2 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gat e-Source Voltage Drain-Gate Voltage Tot al Device Dissipation @TA =25° C Derat e above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol IG(f) VGS(r) VDG PD Tstg TJ Val ue Unit 10 mAdc 40 Vdc 40 Vdc 300 2 .0 -65 to +200 mW mW/oC °c -65 to +1 75 °c ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherWise noted) Charact eristic OFF CHARACTERISTICS Gate-Sourc e Breakdown Voltage (IG = 10 JiAde, Vns = 0) Gate-Source Cutoff Voltage (Vns = 15 Vde, ~ = 100 nAdc) Gate Reverse Cu rrent (VGS = 20 Vde, Vns =0) (VGS = 20 Vde, Vns =0, TA =150°C) 2N5358 2N5359 2N5360 2N5361 2N5362 2N5363 2N5364 Sy mbol Min Max Unit V(BR)GSS 40 - Vde VGS(off) IGSS 0.5 3.0 .
Keywords 2N5362, datasheet, pdf, ETC, Silicon, N-channel, junction, field-effect, transistors, N5362, 5362, 362, 2N536, 2N53, 2N5, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)