40910 Transistors Datasheet

40910 Datasheet, PDF, Equivalent


Part Number

40910

Description

Power Transistors

Manufacture

RCA

Total Page 7 Pages
Datasheet
Download 40910 Datasheet


40910
File No. 527
OO(]3LJ1]
Solid State
Division
Power Transistors
2N3054 2N6260 2N6261
40372 40910 40911
nHometaxial e Medium-Power
Silicon N-P-N Transistors
JEDEC T0-66
JEDECTO·66
With I"tegral Heat Radiator
Rugged Devices for Intermediate-Power Applications in
Industrial and COlnmercialEquipment
Features:
• fT = 800 kHz at 0.2 A (2N3054, 40372)
• Maximum saf...a......of·operation curves for de and pulse
operation
" VCEV(sus) = 90 V min (2N3054, 2N6261)
= =II Low saturation voltage: VCE(sat) 1.0 V at IC 0.5 A
(2N3054)
RCA 2N3054, 2N6260, and 2N6061 are hometaxial·base-
silicon n·p-n transistors intended for a wide variety of
medium- to high-power applications.
Types 40372, 40910, and 40911 are the 2N3054, 2N6260,
and 2N6061 with factory-attached heat radiators intended
for printed-circuit-board applications.
• "Hometaxia'" was coined by RCA from "homogeneous" and
"axia'" to describe a single-ciiffused transistor with a base region of
homogeneous-resistivity in the axial direction (emitter-to-collector,).
Applications:
• Power switching circuits
" Series- and shunt-re",lator driver and output stages
a High-fidelity amplifiers
• Solenoid drive..
"Hometaxial II" is a term 'used to describe RCA's expanded line of
transistors produced by the hometaxial process.
MAXIMUM RATINGS. Absolute-Maximum Values:
·COLLECTOR-TO-BASE VOLTAGE ................................... .
COLLECTOR-TO-EMITTER VOLTAGE:
• With base open ..........•......•.................................
*
With external base-to-emitter
loon ..resistance (RBE) =
..
...
..
.. .
...
..
...
..
..
...
..
...
..
..
...
..
..
.
With base reverse-biased
(VBE=-1·5V) .................................................. ..
"EMITTER-TQ-BASE VOLTAGE •••••••••••••••••••••.•••••.••••••••.•••
"CONTINUOUS COLLECTOR
CURRENT ...................................................... .
·CONTINUOUS BASE CURRENT ••••••••••••••••••••••.••••...•••••••••
TRANSISTOR DISSIPATION:
* At case temperature up tQ 25°C ..................................... .
A1 ambient temperatures up to 250 C ........•.........................
• At temperatures. above 25°C ............ ~ ........................... .
·TEMPERATURE RANGE:
Storage & Operating (Junction) ...................................... .
··PIN TEMPERATURE (During Soldering):
At distance :;::1/32 in. (0.8 mm)
from seating plane for 10 s max. . ................................... .
VCBO
2N6260
40910
50
VCEO
40
VeER(sus)
45
2N3054
40372
90
55
50
2N6261
40911
90
80
85
V
V
V
VCEV(susl
50
90
90 V
VEBO
5
7
7V
IC 3 4 4 A
IB 2 2 2 A
PT
29 25 50 w
(2N6250) (2N3054) (2N6261)
6.8 5.8 5.B w
(40910)
(403721
(40911)
SeeFigs.4& 17 5•• Figs.4&9 SfiFigs.I&7
- - - - - . . -65 to 2 0 0 _
235
*In accordance with JEOEC registration data format JS-9 ROF-10 (2N3054), JS-6 AOF·2 (2N6260, 2N6261)
B-74
85

40910
2N3054, 2N6260, 2N6261, 40372,40910, 40911 _-.,.._ _ _ _ _ _ _ _~_ _ _ File No. 527
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25°C unless otherwise specified
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
VOLTAGE
V de
VCE VBE
CURRENT
A de
IC IB
2N6260
40910
LIMITS
2N3054
40372
2N6261 UNITS
40911
Min. Max. .Min. Max. Min. Max.
4 Collector-Cutoff Current:
With base open
With base-emitter
junction reverse-biased
At TC = 150°C
Emitter-Cutoff Current
Collector-ta-Emitter
Sustaining Voltage:
With base open
With external base-to-
emitter resistance
(RaEI = lOOn
• DC Forward-Current
Transfer Ratio
ColJector-to-Emitter
Saturation Voltage
• Base-ta-Emitter Voltage
Common-Emitte~ Small.signal,
Short-Circuit, Forward
Current Transfer Ratio
Cutoff Freauency
Magnitude of Common-
Emitter, Small-8ignal,
Short-Circuit Forward
Current Transfer Ratio
(f =0.4MHzl
Common..emitter,
SmaU-8ignal, Short·
Circuit Forward
Current Transfer Ratio
(1-1 kHzl
Forward.-8ias Second
Breakdown Collector
Current (t - 1 sl
Thermal Resistance:
Junction-to-CUe
Junction-to-Ambient
ICEO
ICEX
ICEX
IEeO
30
60
40
80
90
40
80
90
VCEO(susl
VCER(susl
hFE
VCE(SBtl
·2
2
4
4
4
2
VeE 4
4
fhfe 4
Ihfel 4
hfe
ISIb
R8JC
R8JA
4
40
80
55
-0 - 1 - 0.5 -
mA
0 - - - - - 0.5
-1.5 - 5 - - - -
--1.5 - - - - 0.5 mA
- - --1.5 - 1.0 -
-1.5 25
-1.5 - - - - 1.0 mA
- --1.5 - 6.0 - -
--5
- --7
0-
0-
5-
-
--
1.0
·mA
0.2
O.l a 0 40 -
O.l a 45 -
-4a 3
-1.5a -
3" - -
0.5a - -
- -1.5a 20 100
0.5" 0.05a
1.5" 0.15a - 1.5
3" I"
1.5 -
-
1.5 - 2.2
0.5 -
55 -
-60
--
--
5-
25 150
- 1.0
--
6.0
--
--
1.7
-80 V
-85 V
'5 - .. ,
25 100
--
--
- -V
- 0.5.
- 1.5
- -V
- -0.1 0.03
0.03 - 0.03
MHz
0.1
2- - -
2-
- -0.1 25 - 25
25
-0.725
-
-
--
6 (max.l
2N6260
30 (max.l
40910
--
--
-0.455
7 (max.l
2N3054
30 (max.l
40372
--
-0:625 -
-
'3.5 (max.l
2N6261
30 (max.l
40911
A
°C/W
apulsed: Pulse duratiop =:;roo #Js, duty factor"" 1.8%.
·In accordance with JEDEC registration data format JS. 9 ROF·l0 (2N30541 JS-6 RDF·2 (2N6260-611
86


Features File No. 527 OO(]3LJ1] Solid State Divis ion Power Transistors 2N3054 2N6260 2N 6261 40372 40910 40911 nHometaxial e M edium-Power Silicon N-P-N Transistors JEDEC T0-66 JEDECTO·66 With I"tegral H eat Radiator Rugged Devices for Interm ediate-Power Applications in Industrial and COlnmercialEquipment Features: • fT = 800 kHz at 0.2 A (2N3054, 40372) • Maximum saf...a......of·operation curves for de and pulse operation " VCE V(sus) = 90 V min (2N3054, 2N6261) = =I I Low saturation voltage: VCE(sat) 1.0 V at IC 0.5 A (2N3054) RCA 2N3054, 2N6 260, and 2N6061 are hometaxial·basesil icon n·p-n transistors intended for a wide variety of medium- to high-power a pplications. Types 40372, 40910, and 40 911 are the 2N3054, 2N6260, and 2N6061 with factory-attached heat radiators in tended for printed-circuit-board applic ations. • "Hometaxia'" was coined by RCA from "homogeneous" and "axia'" to d escribe a single-ciiffused transistor w ith a base region of homogeneous-resistivity in the axial direc.
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