40912 Transistors Datasheet

40912 Datasheet, PDF, Equivalent


Part Number

40912

Description

Power Transistors

Manufacture

RCA

Total Page 7 Pages
Datasheet
Download 40912 Datasheet


40912
File No. 529' _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OClOBLJD
Solid State
Division
Power Transistors
2N3441 2N6263 2N6264
40373 40912 40913
JEDEC TO·66
JEDEC T0-66
With Integral Heat Radiator
Hometaxial ne Medium-Power
Silicon N-P-N Transistors
Rugged Devices for Intermediate, Power Applications
in Industrial and Commercial Equipment
Features:
II 2N6264: premium type from 2N3441 family
II Maximum saf..area·of·operation curves for dc and
pulse operation
a High voltage ratings
II Low saturation voltages
a Thermal-cycl,ing rating curves
Applications:
" Series and shunt regulators
" High.fidelityamplifiers
" Power switching circuits
a Solenoid drivers
RCA 2N3441, 2N6263, and 2N6264 are hometaxial·baseD
silicon n·p·n transistors intended for a wide variety of
medium· to·high power, high·voltage applications.
o "Hometaxial" was coined by RCA from "homogenous" and "axia'"
to describe a single-diffused transistor with a base region of
homogeneous-resistivity in the axial direction {emitter-to-collectorl.
Types 40373, 40912, and 40913 are the 2N3441 , 2N6263,
and 2N6264 with factory ..ttached heat-radiators intended
for printed-circuit-board applications.
"Hometaxial n" is a term used to describe RCA's expanded line of
transistors produced by the hometaxial process.
MAXIMUM RATINGS, Absolute-Maximum Values:
2N6263
40912
2N3441
40373
2N6264
40913
·COLLECTOR-TO·BASE VOLTAGE
COLLECTOR·TO·EMITTER
SUSTAINING VOLTAGE:
* With base open •....••..•••.•......•..•....•......................
With external base-to-emitterTesistance (R SE ) = lOOn .................... .
With base reverse·biased (V SE = -1.5 V) ••.. ~ .. _.•.............•........
"EMITTER-TO-BASE VOLTAGE •.•....•..•.•.....•.•••.•...• _. __ . ____ ..
·CONTINUOUS COLLECTOR CURRENT •••.•...••••.••.•.•.••••••••.••.
PEAK COLLECTOR CURRENT •••.•••••••••••••••••.•••.......•..•••..
·CONTINUOUS BASE CURRENT •••••• ' ••••••••••..•••.•••••••.•••...••
TRANSISTOR DISSIPATION:
* At case temperature up to 25°C •..•.••......•..
At ambient temperatures up to 25uC ......•...........................
* At temperatures above 25°C . . . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"TEMPERATURE RANGE:
Storage & Operating (Junction) . • . . . . • . • . . . . • • . . . . . . . . . . . • . . . . . .
·PIN TEMPERATURE (During Solderingl:
At di~tances21/32 in. (0.8 mm) from seating plane for 10 s max.
V CBO 140 160 170 V
VCEO(susl 120
140
VCER(susl 130
150
VCEV(susl 140
160
V EBO
7
IC 3 3
44
IB 2
PT
20 25
(2N62631 (2N34411
5.B 5.B
(409121
(403731
See Figs. 4 & 7 See Figs. 4 & 7
150 V
160 V
170 V
7V
3A
.oj A
2A
50 W
(2N62641
5.B W
(409131
See Figs. 1& 7
- - - - -65 to 200 - - - - °c
235 °c
*In accordance with JEOEC .registratlon data format JS-6 RDF-2
11-72
109

40912
2N3441,2N6263,2N6264,40373,40912,40913
File No. 529
ELECTRICAL CHARACTERISTICS,At Case Temperature ITC} = 25"C, Unless Otherwise Specified
CHARACTERISTIC
SYMBOL
TEST CONOITIONS
VOLTAGE
V de
VCE VBE
CURRENT
A de
IC IB
2N6263
40912
Min. Max.
LIMITS
2N3441
40373
2N6264
40913
Min. Max. Min. Max,
UNITS
Collector-Cutoff Current:
With base open
Collector-Cutoff Current:
With base-emitter
junction reversed
biased
'" Emitter-Cutoff Current
Collector-ta-Emitter
Sustaining Voltage:a
With base open
With external base-to-
emitter resistance
lABEl = lOOn
With base-emitter
junction reversed
biased
'" DC Forward-Current
Transfer Ratio
Collector-ta-Emitter
Saturating Voltage
Base-ta-Emitter Voltage
'" Magnitude of Common-
Emitter, SmaU-5ignal.
Short-Circuit Forward
Current Transfer Ratio
If = 0.4 MHzl
Gain-Bandwidth Product
• Common-Emitter, Small-
Signal, Short-Circuit
Forward Current Transfer
Ratio If = 1 kHz)
Forward-Bias Second
Breakdown Collector
Current. Pulse Duration
'non-repetitive) '" 1 5
Thermal Resistance:
Junction-to-Case
Junction-ta-Ambient
ICED
100
130
140
'CEX
120
140
140
150
ICEX
ITC = 1500CI
lEBO
120
140
140
150
VCEOlsusl
VCER(sus)
-1.5
-".5
-1.5
-1.5
-1.5
-1.5
-1.5
-1.5
-5
-7
05
0
0 100
1 mA
2' '--
5'
0.05'
mA
la'
6'
,.
mA
0.2
O.l b a 120 140 150
0.1 130 150 160 V
VCEV(sus)
hFE
VCElsa,1
VBE
-1.5 0.1
140 160 170
lb 20 60
3b
0.5 b
20 100' 25 100
2.7 b
5
O.Sb 0.05
1.2'
1 b 0.1
0.5' V
2.7 b 0.9
6'
2 1b
1.5'
4 0.5 b
2' 1.7
V
4 2.7 b
6'
ihl.i
IT
hie
'Sib
RO JC
ROJA
4
4
4
4
120
120
120
0.2 8
0.5
0.2 800 800 BOO kHz
0.1 25
25
0.5 15 75
-0.167
.21
0.417 - A
8.751maxJ
2N6263
30 (max.)
40912
71max.l
2N3441
30 (max.)
40373
3,5 (max.)
'2N6264 . °CIW
3OImax.)
40913
-In accordance with JEDEC registration data format (JS-6 ROF-2).
8CAUTION: The sustaining voltage VCEO(SUS). VCER(sus). and VCEV(sus) MUST NOT be measured on a curve tracer.
b These sustaining voltages should be measured by means of the test circuit shown in Fig. t 1.
Pulsed, pulse duration '" ~O ps; duty factor':;; 2 %.
110


Features File No. 529' _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ O ClOBLJD Solid State Division Power Tra nsistors 2N3441 2N6263 2N6264 40373 409 12 40913 JEDEC TO·66 JEDEC T0-66 With Integral Heat Radiator Hometaxial ne Medium-Power Silicon N-P-N Transistors Rugged Devices for Intermediate, Power Applications in Industrial and Commerci al Equipment Features: II 2N6264: prem ium type from 2N3441 family II Maximum saf..area·of·operation curves for dc and pulse operation a High voltage rati ngs II Low saturation voltages a Therma l-cycl,ing rating curves Applications: " Series and shunt regulators " High.f idelityamplifiers " Power switching cir cuits a Solenoid drivers RCA 2N3441, 2 N6263, and 2N6264 are hometaxial·baseD silicon n·p·n transistors intended f or a wide variety of medium· to·high power, high·voltage applications. o "H ometaxial" was coined by RCA from "homo genous" and "axia'" to describe a singl e-diffused transistor with a base region of homogeneous-resisti.
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