40514 Transistors Datasheet

40514 Datasheet, PDF, Equivalent


Part Number

40514

Description

Power Transistors

Manufacture

RCA

Total Page 6 Pages
Datasheet
Download 40514 Datasheet


40514
_ _ _.,.-_ _ _ _ _ _ _ _ _ _ _ _- - - - - - - - - - - -_ _ _ _ File No. 244
OO(]5LJ1]
Solid State
Division
Power Transistors
2N5034 2N5035
2N5036 2N5037
40514 40513
2N5034
2N5036
40514
JEOEC TO·219AA
2N5035
2N5037
40513
JEDEC TO·219AB
Molded Silicone- Plastic
Hometaxial- Base Transistors
Silicon N-P-N Types for Industrial
and Commercial Applications
Features:
• Low thermal resistance: 8J-C = 1.SoC/W max.
• Low saturation voltage
• High second breakdown ratings for both forward· and
reverse·bias operation
• High peak collector current ratings
• Maximum·area-of·operation curves for DC and pulse
operation
RCA·2N5034, 2N5035, 2N5036, 2N5037", 40513, and
40514 are hometaxial**·base silicon n·p·n power transistors
employing two versions of a unique plastic package. This new
plastic package is available with two different lead con·
figurations: a "vertical·lead" version which will fit a TO·3
socket; a "horizontal-Iead" type for mounting on a printed-
circuit board.
Types 2N5034, 2N5036, and 40514 are the "TO·3" versions.
The 2N5034, 2N5036, and 40514 differ in breakdown·
voltage, collector·current ratings, and leakage·current limits.
These devices may be plugged into a TO·3 socket and secured
by means of an over-elamp whose mounting holes are
identical to those in a TO-3 socket.
Types 2N5035, 2N5037, and 40513 are electrically identical
to the 2N5034, 2N5036, and 40514, respectively, but
employ the horizontal·lead package.
These plastic transistors are intended for a wide variety of
high·power switching and amplifier applications such as series
and shunt regulator driver and output stages and for
high·fidelity amplifiers.
"Formerly Dev. Type Nos. TA7201, TA7202, TA7199, and TA7200
respectively_
**"Hometaxial" was coined by RCA from "homogeneous" and
"axia'" to describe a singl~iffused transistor with a base region of
homogeneous-resistivity silicon in the axial direction (emitter-
to-collector).
MAXIMUM RATINGS. Absolute-Maximum Values:
* COLLECTOR·TO·BASE VOLTAGE ........................................ VCBO
COLLECTOR·TO·EMITTER SUSTAINING VOLTAGE:
With -1.5 volts (VSE) of reverse bias ..... ......................... ,. " .... VCEV(sus)
:(I With external base-to·emitter resistance IRBE) = 100 n ....................... . VCER(sus)
With base open ....................................................... VCEO{SUS)
• EMITTER-TO·BASE VOLTAGE ........................................... VEBO
* CONTINUOUS COLLECTOR CURRENT ................................... IC
* PEAK COLLECTOR CURRENT .......................................... .
* CONTINUOUS BASE CURRENT........................................... IB
* TRANSISTOR DISSIPATION: ............................................ PT
At case temperatures up to 25°C ........................................ .
At temperatures above 25°C ........................................... .
* TEMPERATURE RANGE:
Storage & Operating (Junction) ......................................... .
* LEAD TEMPERATURE (During Soldering)
2N5034, 2N5036, & 40514: At distance" 1/16 in. (1.5Bmm) from seating plane
for 105 max..••.•..
2N5035, 2N5037, & 40513: At distances" 1/8 in. (3.18mm) from case for
10smax........... .
* Typos 2N5034-2N5037, Inclusive, In accordance with JEOEC registration data format Js-6 ADF-2.
40514
40513
2N5034
2N5035
55
2NS036
2NS037
70
V
55 70 V
45 45 60 V
40 50 V
5 5 5V
6 6 8A
12 12 12 A
6 6 6A
83 83 83 W
See Fig. 1
-65 to 150
0c.
235 °c
235 DC
4·71
168

40514
2N5034 2N5035
File No. 244 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5036 2N5037
40514 40513
ELECTRICAL CHARACTERISTICS Case Temperature ITc! = 250C Unless Otherwise Specified
Characteristic
Coliector·Cutoff Current
With external base-ta-emitter
resistance (RaEI = 100 n
* With base-emitter
junction reverse biased
With base open
*· Emitter-Cutoff Current
* DC forward-Current
Transfer Ratio
TEST CONDITIONS
LIMITS
Symbol
DC
DC Emitter
Collector or Base
Voltage (VI Volt"ge (VI
DC
Current (AI
Types
40514
40513
Types
2N5034
2N5035
Types
2N5036 Units
2N5037
VCE VEB VBE IC IB Min. Max. Min. Max. Min. Max.
ICER
20
35
- -2.5 - -
- -- - 1.0 -
-
50 - - - - - 1.0
ICER
(TC = 1500 CI
20
35
50
- 5.0 - - -
- - - 5.0 -
---- -
rnA
-
-
5.0
ICEV
ICEV
(TC= 1500CI
50
65
50
65
-1.5
-1.5
-1.5
-1.5
- - - 1.0 - -
- - - - - 1.0
- - - 5.0 - -
rnA
- - - - - 5.0
ICEO
30
40
0
0
-
-
-
-
-
-
2-
--
- rnA
2
lEBO
hFE
5
4
4
4
4
4
0 - 5.0 - 5.0 - 5.0 rnA
-3" 25 100 - -
-
-4" -
20 80 - -
5" - - - - 20 80
6" - - 5 - - -
8" - - - - 5 -
Coliector·to·Emitter
Sustaining Voltage
With base open
VCEO(sus)
0.2" 0 -
- 40 -
50 - V
With bas!!-emitter
junction r,everse biased
VCEV(SUS)
-1.5 O.l a
- - 55 - 70 - V
With external base-ta-emitter
resistance (R BE) = lOOn
· Base-ta-Emitter Voltage
VCER(SUS)
VBE
* Collector-ta-Emitter
Saturation Voltage
VCE(sa!)
*· Common-Emitter, Small-Signal,
Short-Circuit Forward-Current
Transfer Ratio (f = 1 kHz)
* Magnitude of Common-Emitter,
Small·Signal. Short·Circuit.
Forward-Current
Transfer Ratio (f = 100kHz)
hfe
Ihfel
4
4
4
4
4
0.2a
45 - 45 -
60 -
V
3" - 1.7 - - - -
4a - - - 1.7 - - V
58 - - - - - 1.7
38 0.3 - 1.0 - - - -
-4a 0.4 -
- 1.0 - - V
58 0.5 - - - - - 1.0
0.5 15 - 15 - 15 -
0.5 8 28 8 28 8 28
Thermal Resistance
(Junction·to·Case)
8J•C
- 1.5 - 1.5 - 1.5 °CIW
a Pulsed; pulse duration'" 300 IJS, duty factor - 1.8%.
"Types 2N5034-2N5037, inclusive, in accordance with JEDEC registration data format JS-6 RDF-2.
169


Features _ _ _.,.-_ _ _ _ _ _ _ _ _ _ _ _- - - - - - - - - - - -_ _ _ _ File No. 244 OO (]5LJ1] Solid State Division Power Tra nsistors 2N5034 2N5035 2N5036 2N5037 40 514 40513 2N5034 2N5036 40514 JEOEC TO ·219AA 2N5035 2N5037 40513 JEDEC TO·2 19AB Molded Silicone- Plastic Hometaxi al- Base Transistors Silicon N-P-N Type s for Industrial and Commercial Applica tions Features: • Low thermal resista nce: 8J-C = 1.SoC/W max. • Low satura tion voltage • High second breakdown ratings for both forward· and reverse bias operation • High peak collector current ratings • Maximum·area-of· operation curves for DC and pulse opera tion RCA·2N5034, 2N5035, 2N5036, 2N50 37", 40513, and 40514 are hometaxial** base silicon n·p·n power transistors employing two versions of a unique pla stic package. This new plastic package is available with two different lead co n· figurations: a "vertical·lead" ver sion which will fit a TO·3 socket; a " horizontal-Iead" type for mounting on a printed- circuit board..
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