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2N5225

NPN SILICON ANNULAR TRANSISTOR

Description

2N5225 (SILICON) NPN SILICON ANNULAR TRANSISTOR ... designed for general purpose amplifier applications and for complementary circuitry with types 2N5226. Collector-Emitter Breakdown Voltage BVCEO = 25 Volts (Mini Current Gain Specified at 10 rnA and 50 rnA Collector· Base Capacitance - Ccb = 20 pF (Maxi NPN SILICON AMPLIFIER TRANSISTOR 'MAXIMUM RAT...

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