SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P Q =3W(Min.)
(f=470MHz, V CC=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V CC=15V, P±* : 0.4W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
VcBO
3...
