9
:
2SB1 01
1«
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
POWER AMPLIFIER APPLICATIONS.
FEATURES . Low Collector Saturation Vol tage
: VcE(sat)=-0,4V(Max.) a t I C=-4A . Complementary to 2SD1412
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Volt...
