_________________________________ File No. 675
OOcn5LJD
Solid State Division
Power Transistors
2N5954 2N6372 2N6467 40829
2N5955 2N6373 2N6468 40830
2N5956 2N6374
40831
JEDEC TO·66
H·1340
JEDECTO·66 With Integral Heat Radiator H·1470A
Silicon N-P-N and P-N-P Medium-Power Transistors
General·Purpose Types for
Switching Applications in Military, Industrial, and Commercial Equipment
.Features
• 2N5954. 2N5955, 2N5956 complements to 2N6372. 2N6373, 2N6374
• Low saturation voltages
• Maximum-safe-area"of-operation curves
• Thermal-cycle ratings
• Hermetically·sealed JEDEC TO·66 package
• High gain at high current
RCA·2N5954. 2N5955, 2N5956. 2N6467. and 2N646sA are multiple·epitaxial p·n·p transistors. RCA·2N6372. 2N6373, and 2N6374- are multiple·epitaxial n·p·n transistors. Theyare
complements to 2N5954. 2N5955, and 2N5956. These devices differ in voltage ratings and in the currents at which the para· meters are controlled. All are supplied in t.