40830 Transistors Datasheet

40830 Datasheet, PDF, Equivalent


Part Number

40830

Description

Power Transistors

Manufacture

RCA

Total Page 7 Pages
Datasheet
Download 40830 Datasheet


40830
_________________________________ File No. 675
OOcn5LJD
Solid State
Division
Power Transistors
2N5954 2N6372 2N6467 40829
2N5955 2N6373 2N6468 40830
2N5956 2N6374
40831
JEDEC TO·66
H·1340
JEDECTO·66
With Integral Heat Radiator H·1470A
Silicon N-P-N and P-N-P
Medium-Power Transistors
General·Purpose Types for
Switching Applications in Military,
Industrial, and Commercial Equipment
.Features
• 2N5954. 2N5955, 2N5956 complements to 2N6372. 2N6373, 2N6374
• Low saturation voltages
• Maximum-safe-area"of-operation curves
• Thermal-cycle ratings
• Hermetically·sealed JEDEC TO·66 package
• High gain at high current
RCA·2N5954. 2N5955, 2N5956. 2N6467. and 2N646sA are
multiple·epitaxial p·n·p transistors. RCA·2N6372. 2N6373,
and 2N6374- are multiple·epitaxial n·p·n transistors. Theyare
complements to 2N5954. 2N5955, and 2N5956. These devices
differ in voltage ratings and in the currents at which the para·
meters are controlled. All are supplied in the JEDEC TO·66
package.
Types 2N5954, 2N5955, and 2N5956 are available with
factory·attached heat radiators as RCA types 40829, 40830.
and 40831, respectively. The other devices may be obtained
with heat radiators on special order. Radiator versions are in·
tended for printed·circuit·board applications, and differ elec·
trically from their basic counterparts only in device dissipation
(5.8 W up to 25°C ambient! and thermal resistance (30°CIW
max. at TA = 25°C).
• Formerlv RCA Dev. Nos. TA7264, TA7265, TA7266, TA8710, and
TA8709. respectively.
• Formerly RCA Dev. Nos. TA8352, TA8353. and TA8354, respectively.
MAXIMUM RATINGS,Absolute-Maximum Values:
..:N:::·"P·"'N'-_....!:2!!N!::63::;7"'4'--'2:::N:::6:::37=3_-=2"'N:::6:=37!-'2"-_ _ _ _ _ _ _ _ __
P·N·P
2N5956.
40831.
2N5955.
40830.
2N5954.
40829.
2N6467.
·COLLECTOR·TO·BASE VOLTAGE .............
COLLECTOR·TO·EMITTER VOLTAGE:
* With 1.5 volts (V BE) of reverse bias, and external
baso!-to-emitter resistance (RSE) "" 100 n ....... .
With external base-ta-emitter
resistance (R SE) = 100 11 .................•..
With base open ........•.........••.......•
*EMITTER·TO·BASE VOLTAGE ..........•......
·CONTINUOUS COLLECTOR CURRENT ........ .
·CONTINUOUS BASE CURRENT .............. .
TRANSISTOR DISSIPATION:
At case temperatures up to 25°C .••............
V CBO
V CER
V CEO
VEBO
IC
IB
At ambient temperatures up to 25°C ......•....
At case temperatures above 2SoC .•........•...•
*TEMPERATURE RANGE:
Storage and Operating (Junction) .............. .
*PIN TEMPERATURE (During Soldering):
At distances ~ 1/32 in. 10.8 mm) from
seating plane for 10 s max. . ................. .
50 70 90 110
50 70 90 110
45 65 B5 105
40 60 80 100
5 55
6664
222 2
40
12N6374)
(2N5956)
5.8
(408311
40 40 40
(2N6373) (2N6372) (2N6467)
(2N59551 (2N59541
5.8 5.8
(40830)
(408291
See Figs. 1, 2, and 3.
65 to +200
+235
130 V
130 V
125 V
120 V
5V
4A
2A
40
(2N64661
w
III In accordance with JEDEC.registration data format JS-6-RDF-2 (all types except 40829, 40830, and 40831)
• For ~n-p devices, voltage and current values are ne~tive.
264
9·74

40830
File No. 675 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N5954-6, 2N6372-4, 2N6467-B, 40B29-31
ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25'C unless otherwise specified
CHARACTERISTIC
Collector Cutoff Current:
With external base-to·emitter
resistance (RBE) = 100 n
With base·emitter junction
reverse-biased,
(R8E) = lOOn
* With base-emitter junction
reverse.biasedb(RBE) = 100 n,
andTC=150 C
With base open
Emitter Cutoff Current
DC Forward·Current
Transfer Ratio
Collector·to·Emitter
Sustaining Voltage:
With base open
SYMBOL
ICER
ICEX
ICEO
lEBO
hFE
TEST CONDITIONs+
VOLTAGE
Vdc
VCE VBE
35
55
75
45 -1.5
65 -1.5
85 -1.5
45 -1.5
65 -1.5
85 -1.5
2N6374
CURRENT 2N595s+
Adc 40831·
IC IB Min. Max.
100
-- --
- 100
-
-
--
-2
--
--
25
45
65
-5
-1
--
--
- 0.1
4 3" 20 100
4 2.5a - -
4 2a - -
4 6a 5 -
LIMITS
2N6373
2N595s+
40830·
Min. Max.
--
100
-
--
-
100
-
-2
--
--
-1
--
- 0.1
--
20 100
--
5-
2N6372
2N5954· UNITS
40829·
Min. Max.
-
-
-
100
---
100
jJ.A
jJ.A
--
-2
--
--
-1
- 0.1
--
--
20 100
5-
mA
rnA
rnA
VCEO(sus)
O.la
40b -
60b -
SOb -
With external base·to·
emitter resistance
(RBE) = 100 n
VCER(sus)
O.la
45b -
65b -
85b -
V
With base·emitter
junction reverse-biased,
(RBE) = 100 n
Base-to-Emitter Voltage: All types
All types
All types
2N6372·2N6374
Collector·to·Emitter
Saturation Voltage
VCEX(sus)
VBE
VCE(sat)
4
4
4
4
-1.5 O.la
50b -
3a
2.5a
2a
6"
3" 0.3
2.5a 0.25
2a 0.2
-
-
-
-
-
-
-
2
-
-
3
1
-
-
70b -
--
-2
--
-3
--
-
-
-1
90b -
--
--
-2
-3
--
--
-1
V
V
* Magnitude of Forward·
Current Transfer Ratio
(f = 1 MHz):
2N6372-2N6374
2N5954·56, 40B29·31
F.orward·Current
Transfer Ratio
(f = 1 kHz)
Ihfel
hfe
4
4
4
-1
-1
4-
5-
4
5-
4
5
--
0.5
25 -
25 -
25 -
Thermal Resistance:
Junction-to'case, 2N5954·56,
2N6372-74
Junction·to·Ambient
40829-40831
ROJC
ROJA
- 4.3
- 30
- 4.3
- 30
- 4.3
·CIW
- 30
*In accordance With JEDEC registration data format JS-6 RDF-2. a Pulsed, pulse duration = 300 P.S, duty factor = 1.8%.
• For p-n-p devices, voltage and current values are negative.
b CAUTION: Sustaining voltages VCEO(sus}, VCER(sus), and VCEX(sus)
MUST NOT be measured on a curve tracer. (See Figs. 19 & 20),
265


Features _________________________________ File N o. 675 OOcn5LJD Solid State Division Power Transistors 2N5954 2N6372 2N6467 40829 2N5955 2N6373 2N6468 40830 2N5 956 2N6374 40831 JEDEC TO·66 H·134 0 JEDECTO·66 With Integral Heat Radia tor H·1470A Silicon N-P-N and P-N-P M edium-Power Transistors General·Purpos e Types for Switching Applications in M ilitary, Industrial, and Commercial Equ ipment .Features • 2N5954. 2N5955, 2N5956 complements to 2N6372. 2N6373, 2 N6374 • Low saturation voltages • Maximum-safe-area"of-operation curves • Thermal-cycle ratings • Hermeti cally·sealed JEDEC TO·66 package • High gain at high current RCA·2N5954 . 2N5955, 2N5956. 2N6467. and 2N646sA a re multiple·epitaxial p·n·p transist ors. RCA·2N6372. 2N6373, and 2N6374- a re multiple·epitaxial n·p·n transist ors. Theyare complements to 2N5954. 2N5 955, and 2N5956. These devices differ i n voltage ratings and in the currents a t which the para· meters are controlled. All are supplied in t.
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