40894 Transistors Datasheet

40894 Datasheet, PDF, Equivalent


Part Number

40894

Description

Power Transistors

Manufacture

RCA

Total Page 5 Pages
Datasheet
Download 40894 Datasheet


40894
File No. 548
D\l(]5LJ[J
Solid State
Division
RF Power Transistors
40894 40896
40895 40897
JEDEC TO·72
H-1299
High - Frequency
Silicon N-P-N Transistors
For TV·Tuner, FM and AM/FM "Front·End", and
IF Amp,lifier, Oscillator, and Converter Service
Features:
• High gain·bandwidth products:
fT = 1200 MHz typo for tuner types
= 800 MHz typo for if-amplifier types
• Very low collector·to·base feedback capacitance:
Ccb = 0.7 pF typo for 40894.40895
• Low noise figure:
3 dB typo at 200 MHz for rf amplifier type
RCA-40894; 40895. 40896. and 40897 are high-frequency
n-p-n silicon devices characterized especially for rf. mixer.
oscillator. and if stages of vhf. SSB. and FM receivers.
These devices utilize a hermetically sealed four-lead JEDEC
TO-72 package_ All active elements of the transistor are in-
sulated from the case. which may be grounded by means of
the fourth lead in applications requiring minimum feedback
capacitance. shielding of the device. or both.
• High power gain as neutralized amplifier:
GpE = 15 dB min. at 200 MHz (40894)
• High power output as uhf oscillator:
POE = 20 mW typ_ at 500 MHz (40896)
• Low noise figure:
NF = 4_5 dB max_ at 200 MHz (40894)
• Low collector-ta-base time constant:
rb'Cc = 14 ps max_
MAXIMUM RATINGS. Absolute-Maximum Values:
COLLECTOR-TO-EMITTER VOLTAGE ... ___ . ______ . ____ .... .
COLLECTOR-TO-BASE VOLTAGE .. _. ______ ..... _.. _.. _.... .
EMITTER-TO-BASE VOLTAGE. _... _.. ____ .. ___ ............ .
CONTINUOUS COLLECTOR CURRENT ...................... .
TRANSISTOR DiSSiPATION ............................... .
With heat sink. at case temperatures up to 25°C ............... .
With heat sink, at case temperatures above 25°C _.. _... ____ .. _. _
At ambient temperatures up to 25°C ....................... .
At ambient temperatures above 25°C .......... _............ .
TEMPERATURE RANGE:
Storage & Operating (Junction) ........................... .
CASE TEMPERATURE (During soldering):
At distances ~ 1/32 in. (0.8 mm) from seating
surface for 10 seconds max. . .......................... .
VCEO
VCBO
VEBO
Ie
PT
12
20
2.5
50
300
Derate linearly 1.71
200
Derate linearly 1.14
-65 to +200
265
V
V
V
rnA
mW
mwl"e
mW
mwl"e
°e
°c
12-71
443

40894
40894-40897
ELECTRICAL CHARACTERISTICS at Ambient Temperature (TAl 25°C unless otherwise specified
File No. 548
CHARACTERISTICS
SYMBOLS
TEST CONDITIONS
DC COLLECTOR OR
FREQUENCY
EMITTER VOLTAGE
MHz
V
VCS VCE VES
LIMITS
OCCURRENT
mA
TYPE 40894
RF AMPLIFIER
TYPE 4OS95
MIXER
UNITS
IE IC IS Min. TVp· Max. Min. Typ. Max.
Collector·Cutoff
Current
TA = 150'C
ICSO
Collector-to·Base
V(SR}CBO
Breakdown Voltage ....
Collector-ta-Emitter
Sustaining Voltage
VCEOlsus}
Emitter-ta-Base
V(SR}ESO
Breakdown Voltage
ColleCtor-ta-Emitter
Saturatio~ Voltage
Base-ta-Emitter
Saturation Voltage
VCEls.t}
VBElsat}
15 0
-- - 0.02 -
0.02
15 0
--
~A
I- - I
0 0.001
20 - - 20 - - V
- -3 0 15 -
15 -
V
0.Q1 0
-2.5
-- 2.5
-V
-10 I
-0.4
- 0.4 V
10 1 - -
1-
1V
Static Forward Current- hFE
Transfer Ratio
6 1 50 SO 250 40 70 250
Magnitude of Common-
Emitter. Small·Signal
Short·Circuit, For-
ward Current
Transfer Ratio8
ih,.1
Collector-ta-Base
Feedback Capaci·
tanceb
Ccb
Common-Base Input
CapacitanceC
Cib
100
1 kHz
6
6
0.1 to 1
10
5
2
0
0.1 to 1
0.5 0
9 14 20 9 14 20
25 90 300 25 90 300
- 0.7
1
0.7 1 pF
- - 2-
2 pF
Collector-ta-Base
Time Constanta
'b'Ce
Small·Signal Power Gain
in Neutralized Com-
mon-Eminer Ampli-
fier Circuit8 (see
Fig.6}
GpE
Noise FigureS
NF
31.9
6
10.7
200
200
12
12
6
2 3 7 14 3 7 14 ps
5 - - -- - -
5
15 21
- 15 21
- dS
- - -1.5 3 4.5 -
dS
aLead No... (case) grounded; As .. 1250
bn.,..·termin.1 mealu,ement of the collector·to-base capaCitance
wi'Ch the CUll and emitter leadl connected to the guard terminel.
clem No... 10ISel floating.
444


Features File No. 548 Dl(]5LJ[J Solid State Divis ion RF Power Transistors 40894 40896 4 0895 40897 JEDEC TO·72 H-1299 High - Frequency Silicon N-P-N Transistors F or TV·Tuner, FM and AM/FM "Front·End" , and IF Amp,lifier, Oscillator, and Co nverter Service Features: • High gain ·bandwidth products: fT = 1200 MHz typ o for tuner types = 800 MHz typo for if -amplifier types • Very low collector ·to·base feedback capacitance: Ccb = 0.7 pF typo for 40894.40895 • Low noi se figure: 3 dB typo at 200 MHz for rf amplifier type RCA-40894; 40895. 40896 . and 40897 are high-frequency n-p-n si licon devices characterized especially for rf. mixer. oscillator. and if stage s of vhf. SSB. and FM receivers. These devices utilize a hermetically sealed f our-lead JEDEC TO-72 package_ All activ e elements of the transistor are insula ted from the case. which may be grounde d by means of the fourth lead in applic ations requiring minimum feedback capac itance. shielding of the device. or both. • High power gain.
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