41505 Transistors Datasheet

41505 Datasheet, PDF, Equivalent


Part Number

41505

Description

Power Transistors

Manufacture

RCA

Total Page 3 Pages
Datasheet
Download 41505 Datasheet


41505
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 771
OOcrdLJD
Solid State
Division
Power Transistors
41505
High-Voltage, Medium-Power
Silicon N-P-N.Transistor
For High-Speed Switching and Linear-Amplifier Applications
"Plastic TO.s"
H-1642
Features
• Thermal fatigue ratings
• High frequency response: fT = 20 MHz
• Maximum area-ot-operation curves for de and pulse operation
• Designed to assure freedom from second breakdown in class A. B.
and C operation at maximum ratings
RCA·41505 is an epitaxial·coliector. diffused·base silicon n·p·n
transistor with high breakdown voltage. high frequency reo
sponse. and high switching speed.
Typical applications for this device include TV video output.
RGB output, chroma.output, TV blanking, solenoid drivers,
off·line inverters, regulators, audio output, and electrostatic
deflection in display circuits.
NOTE: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES
ONLY TO THE DISSIPATION·LIMITED PORTION AND ISlb-LIMITED
PORnON OF /U,XIMUM-OPERATING·AREA CURVES.
DO NOT DERATE THE SPECIFIED VALUE FOR IC MAX.
MAXIMUM RATINGS,Absolute·Maximum Values:
COLLECTOR.TO.EMITTER.SUSTAINING VOLTAGE
EMITTER·TO·BASE VOLTAGE
COLLECTOR CURRENT
BASE CURRENT . . . .
TRANSISTOR DISSIPATION:
At case temperatures up to 2Soc
At case temperatures above 2SoC
For pulse operation . . . .
TEMPERATURE RANGE:
Storage and Operating (Junction)
LEAD TEMPERATURE (During soldering):
At distance~ 1/16 in. (1.59 mm) from case for 10 s max..
468
2S so 7S 1011 125 150 175
CASE TEMPERATURE (Tcl - fit:
Fig. t - Dissipation derating curve.
200
92SS04~RI
VCEO(SUS)
VEBO
IC
IB
PT
200
1.0
0.5
20
See Figs. 1 and 4
See Fig. 4
-65 to 135
230
V
V
A
A
w
4-74

41505
File No. 771 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 41505
ciELECTRICAL CHARACTERISTICS, At Case Temperature (T = 2!PC:
CHARACTERISTIC
SYMBOL
Collector-Cutoff Current:
With external base-ta-emitter
resistance (RBE) = 100 n
VCB
ICER
DC Forward·Current Transfer
Ratio
Collector·to·Emitter
Sustaining Voltage:
With base open
Collector·to·Emitter
Saturation Voltage
Emitter-ta-Base
Breakdown Voltage
hFE
VCEO(sUS)
VCE(sat)
V(BR)EBO
Output Capacitance (at 1 MHz)
Thermal Resistance:
Junction-ta-Case
Junction-ta-Ambient
Cob
ROJC
ROJA
20
TEST CONDITIONS
VOLTAGE
V de
CURRENT
mAde
VCE VEB VBE IC IE IB
150
10 50
10 5
10 0
50 5
01
0
LIMITS
41505
MIN. MAX.
- 50
20
10
200a
-
-
-
-2
7-
-8
- 5.5
- 138
UNITS
IlA
V
V
V
pF
°C/W
a CAUTION: The sustaining voltage VCEO(SUS) MUST NOT be measured on a curve tracer.
TERMINAL CONNECTIONS
Lead 1 - Emitter
Lead 2 - Base
Lead 3 - Collector
Rectangular Metal Slug - Collector
I
u
!:!
wz>-
'o>""''"""-
"w
8--''
20 40 60
COLLECTOR-TO-"EMI!TER VOLTAGE (VCE)-V
92C5-23965
Fig.2 - Typical output characteristics.
ICOLLECTOR-TO-EMITTER VOLTAGE'(V, )-10 V
..,0.1
BASE-lO-EMITTER VOLTAGE (VBEJ-V
!:J2C5-23964
Fig.3 Typical input characteristics.
469


Features _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 771 OOc rdLJD Solid State Division Power Trans istors 41505 High-Voltage, Medium-Powe r Silicon N-P-N.Transistor For High-Spe ed Switching and Linear-Amplifier Appli cations "Plastic TO.s" H-1642 Featur es • Thermal fatigue ratings • High frequency response: fT = 20 MHz • Ma ximum area-ot-operation curves for de a nd pulse operation • Designed to assu re freedom from second breakdown in cla ss A. B. and C operation at maximum rat ings RCA·41505 is an epitaxial·colie ctor. diffused·base silicon n·p·n tr ansistor with high breakdown voltage. h igh frequency reo sponse. and high swit ching speed. Typical applications for t his device include TV video output. RGB output, chroma.output, TV blanking, so lenoid drivers, off·line inverters, re gulators, audio output, and electrostat ic deflection in display circuits. NOT E: CURRENT DERATING AT CONSTANT VOLTAGE APPLIES ONLY TO THE DISSIPATION·LIMITED PORTION AND ISlb-LIMI.
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