40412V2 Transistor Datasheet

40412V2 Datasheet, PDF, Equivalent


Part Number

40412V2

Description

Power Transistor

Manufacture

RCA

Total Page 3 Pages
Datasheet
Download 40412V2 Datasheet


40412V2
_______________________________ FileNo.211
OOCBLJD
Solid State
Division
Power Transistors
40346 40346V1 40346V2
40412 40412V1 40412V2
,~.. ..*
! .•
40346V2
40412V2
H~1375
~_.1'~ ..,~
-'40346Vl
40412Vl
H-1468
wr
40346S
40412S
II \
40346L
40412L
II
\
\
H·1380
Medium-Power Silicon
N-P-N Planar Transistors
For High·Voltage Switching and
Linear·Amplifier Applications
Features:
• For operation at junction
lomperature up to 2000 C
• Planar construction for
low noise and low leakage
These devices are available with either 1%·
inch leads fTO-5 package) or %-inch leads
(TO·39 package). The longer-lead versions are
specified by suffix "L" after the type num-
ber; the shorter-lead versions are spacified by
suffix "s" after the type number.
RCA·40346, ·40346V1, ·40346V2, ·40412, ·40412V1, and
-40412V2 are silicon n·p-n transistors having high breakdown
voltages, high frequency·response capability, and fast switch·
ing speeds.
These transistors are intended for a wide variety of low· and
medium·power, high·voltage applications. Types 40346,
40346V1, and 40346V2 are especially useful in such de·
vices as neon indicator and NIXIE* driver circuits and
in differential and operational amplifiers. Types 40412,
40412V1, and 40412V2 are especially suited for class·A
acldc audio·amplifier service.
Types 40346 and 40412 are supplied in a JEDEC TO·
39 (S) or TO-5 (L) package; types 40346V1 and 40412V1,
with a factory·attached heat radiator for greater free·air
dissipation,capability; and types 40346V2 and 40412V2 are
supplied with an attached flange for increased power dissi·
pation and mounting convenience.
* Nixie is a Registered Trademark of Burroughs Corporation,
Electronic Com.p~n~nts Division, Plainfield, N. J.
MAXIMUM RATINGS, Absolute-Maximum Values:
40346 40346V1 40346V2 40412 40412V1 40412V2
COLLECTOR·TO·EMITTER VOLTAGE:
With RBE = 1,000 n .
With RBE = 10,000 n
COLLECTOR CURRENT.
BASE CURRENT.
TRANSISTOR DISSIPATION:
At case temperatures up to 250 C .
At free·air temperatures up to 50°C.
At free·air temperatures up to 250 C .
At other temperatures.
TEMPERATURE RANGE:
Storage and Operating
VCER(sus)
175
IC 1
IB 0.5
PT
10
1
..
..
175
0.5
4
175
250
0.5 0.5
10 10
1
See Fig. 1
-65 to +200
250
0.5
4
V
250 V
A
0.5 A
10 W
W
W
°c
402 9-73

40412V2
File No. 211 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40346, V1, V2
40412, V1, V2
ELECTRICAL CHARACTERISTICS, Case Temperature (TC) = 2f1JC, Unless Otherwise Specified
CHARACTERISTICS
SYMBOL
LIMITS
VOLTAGE ~RRENI 40346
40412
V de
rnA de 40346V2 40346VI 40412V2 40412VI UNITS
VCE VEB
IC Max. Min. Mill<. Min. Mill<. Min. Max. Min.
Collector-Cutoff Current:
With base open
With R = 10,000 ohms
With base reverse-biased:
TC=25°oC
TC=150o C
TC=150 C
Emitter--Cutoff Current
ICEO
ICER
ICEV
ICEV
ICEV
lEBO
lEBO
100 -
100 -
200 1.5
200 1.5
ISO 1.5
--
4
3
- - - --
-- -5
- -5 -
-
1
--
I
J.IA
mA
- - ----
--
10
I
---
10
-I
--
-
-
2
---
--
2
J.IA
mA
mA
- - -- - ---
-
5
-
--
5
- - J.IA
100 100 J.IA
CoUectol""To-Emitler
.Sustaining Voltage:
With external base-to-
emitter resistance
RBE=I,OOO ohms
RBE=IO,OOO ohms
~~~:~:~:~ --
--
- -- - -50 175
- - -50
175 -
--
- 250
250
V
V
Collector-To-Emitter
I'," Saturation Voltage!
IB=I rnA
Base-TO*Emitter Voltage
Second-Bre akdown Current
DC Forward-Current
Transfer Ratio
-VCE(sat)
VBE
ISIb
10
200
hFE
hFE
10
20
-
-
-
-
-
- --10 0.5
0.5
- -- V
--10 I
I- - -- V
--
-
-
-
-- SO
5D
'mA
- --10 25 - 25 -
-
- -- -30
-
- 40
40
Small-Signal Forward-
Current Transfer Ratio:
f=5 MHz
hIe 10 -
-- - -10 2 2 2 2
Output Capacitance:
VCB= IOV, f= I MHz
Cob - -
- - - - - - -10 10 pF
Thermal Resistance:
Junction-to"'cBse
Junction-to-afree au
ROJC
--~JFA
-
-
- - --
-
- - - -IS IS °C/W
- - - - -45 .
45 °C/W
403


Features _______________________________ FileNo.2 11 OOCBLJD Solid State Division Power Transistors 40346 40346V1 40346V2 4041 2 40412V1 40412V2 ,~.. ..* ! .• 4034 6V2 40412V2 H~1375 ~_.1'~ ..,~ -'40346V l 40412Vl H-1468 wr 40346S 40412S II 40346L 40412L II H·1380 Medi um-Power Silicon N-P-N Planar Transisto rs For High·Voltage Switching and Line ar·Amplifier Applications Features: For operation at junction lomperatur e up to 2000 C • Planar construction for low noise and low leakage These de vices are available with either 1%· in ch leads fTO-5 package) or %-inch leads (TO·39 package). The longer-lead vers ions are specified by suffix "L" after the type num- ber; the shorter-lead ver sions are spacified by suffix "s" after the type number. RCA·40346, ·40346V 1, ·40346V2, ·40412, ·40412V1, and - 40412V2 are silicon n·p-n transistors having high breakdown voltages, high fr equency·response capability, and fast switch· ing speeds. These transistors are intended for a wi.
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