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ITCH27100B2

Innogration
Part Number ITCH27100B2
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH27100B2 Preliminary Datasheet V1.0 2500MHz-2700MHz, 100W, 28V High...
Datasheet PDF File ITCH27100B2 PDF File

ITCH27100B2
ITCH27100B2

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH27100B2 Preliminary Datasheet V1.
0 2500MHz-2700MHz, 100W, 28V High Power RF LDMOS FETs Description The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH27100B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 2500 MHz 16.
1 51.
1 52.
8 51.
8 51.
8...


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