Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20120B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs
Description
The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/...
