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ITBH09150B2

Innogration
Part Number ITBH09150B2
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITBH09150B Product Datasheet V2.0 700MHz-1000MHz, 150W, 28V High Power...
Datasheet PDF File ITBH09150B2 PDF File

ITBH09150B2
ITBH09150B2

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITBH09150B Product Datasheet V2.
0 700MHz-1000MHz, 150W, 28V High Power RF LDMOS FETs Description The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITBH09150B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1000 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 960 MHz 20.
5 51.
9 62.
5 53 67.
9 ITBH09150B2E ...


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