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PDB4854S

Potens semiconductor

Dual N-Channel MOSFETs


Description
Preliminary datasheet 40V Dual N-Channel MOSFETs PDB4854S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and c...



Potens semiconductor

PDB4854S

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