FMMT494Q
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23
Feature
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Feature
BVCEO > 120V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current 500mW Power Dissipation hFE characterised up to 1A for high current gain ho...
