HY3606P/B
N-Channel Enhancement Mode MOSFET
Features
60V/162A
RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
Switching application Power Management for Inverter Systems.
D
G N-Channel MOSFET
Orde...
