70R600P MOSFET Datasheet

70R600P Datasheet, PDF, Equivalent


Part Number

70R600P

Description

N-channel MOSFET

Manufacture

MagnaChip

Total Page 10 Pages
Datasheet
Download 70R600P Datasheet


70R600P
MMD70R600P Datasheet
MMD70R600P
700V 0.6N-channel MOSFET
Description
MMD70R600P is power MOSFET using magnachips advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
ID
Qg,typ
Value
750
0.6
3
7.3
23
Unit
V
V
A
nC
Package & Internal Circuit
D
G
DS
G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code
MMD70R600PRH
Marking
70R600P
Temp. Range
-55 ~ 150
Package
TO-252
Packing
Reel
RoHS Status
Halogen Free
Jun. 2014 Revision 1.0
1 MagnaChip Semiconductor Ltd.

70R600P
MMD70R600P Datasheet
Absolute Maximum Rating (Tc=25unless otherwise specified)
Parameter
Drain Source voltage
Gate Source voltage
Continuous drain current
Pulsed drain current(1)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
dv/dt
Rating
700
±30
7.3
4.6
21.9
71
142
50
Unit
V
V
A
A
A
W
mJ
V/ns
Note
TC=25
TC=100
Diode dv/dt ruggedness
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS
dv/dt
Tstg
Tj
15
-55 ~150
150
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
1.75
62.5
Unit
/W
/W
Jun. 2014 Revision 1.0
2 MagnaChip Semiconductor Ltd.


Features MMD70R600P Datasheet MMD70R600P 700V 0. 6Ω N-channel MOSFET  Description M MD70R600P is power MOSFET using magnach ip’s advanced super junction technolo gy that can realize very low on-resista nce and gate charge. It will provide mu ch high efficiency by using optimized c harge coupling technology. These user f riendly devices give an advantage of Lo w EMI to designers as well as low switc hing loss.  Key Parameters Paramet er VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 750 0.6 3 7.3 23 Unit V Ω V A nC  Package & Internal Circ uit D G DS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Te sted  Green Package – Pb Free Plat ing, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Cont rol  DC – DC Converters  Order ing Information Order Code MMD70R600PR H Marking 70R600P Temp. Range -55 ~ 1 50℃ Package TO-252 Packing Reel RoHS Status Halogen Free .
Keywords 70R600P, datasheet, pdf, MagnaChip, N-channel, MOSFET, 0R600P, R600P, 600P, 70R600, 70R60, 70R6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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