temperature Triacs. ADS4CH80 Datasheet

ADS4CH80 Triacs. Datasheet pdf. Equivalent


ADV ADS4CH80
 
ADV
3 Quadrants High temperature Triacs
     
ADS4CH60/80
General Description
High current density due to mesa technology , guaranteed maximum
junction temperature 150° C. The ADS4CH triac series is suitable for
general purpose AC switching. They can beused as an ON/OFF function
in applications such as static relays, heating regulation, Rectifier-fed DC
inductive loads e.g.DC motors and solenoids , motor speed controllers.
The heatsink can be reduced,compared to traditional triacs, according to
the high performance at given junction temperatures.
2.T2
3.Gate
1.T1
2
Features
Repetitive Peak Off-State Voltage: 600V/800V
R.M.S On-State Current ( IT(RMS)= 4A )
High Commutation dv/dt
High junction temperature operating capability
These Devices are Pb-Free and are RoHS Compliant
1 23
TO-220
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 133 °C
Conditions
ADS4CH60
ADS4CH80
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 150°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 150°C
Average Gate Power Dissipation(Tj=150°C)
Peak Gate Power Dissipation(tp=20us,Tj=150°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
4
30/32
3.7
50
2
0.5
5
- 40 ~ 150
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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ADS4CH80 Datasheet
Recommendation ADS4CH80 Datasheet
Part ADS4CH80
Description 3 Quadrants High temperature Triacs
Feature ADS4CH80;   ADV 3 Quadrants High temperature Triacs       ADS4CH60/80 General Description High current densi.
Manufacture ADV
Datasheet
Download ADS4CH80 Datasheet




ADV ADS4CH80
 
ADV
Electrical Characteristics( Tj = 25°C unless otherwise specified )
     
ADS4CH60/80
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
Q1-Q2-Q3 Gate Trigger Voltage
Q1-Q2-Q3 Gate Trigger Current
Q1-Q2-Q3
Holding Current
Q1-Q3
Q2
Latching Current
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Change of
Commutating Voltage
Junction to case (AC)
Junction to ambient
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 150°C
ITM = 5.5A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 150°C
VD = 12V RL = 33
IT = 0.1A
IG = 1.2 IGT
VD = 2/3VDRM gate open
Tj = 150°C
VD=400V Tj = 150°C
(dI/dt)c=-1.7A/ms
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
ADS4CH60/80
S Blank B
5
1.75
1.55
Unit
uA
mA
V
0.15 V
1.5 V
10 35 50 mA
20 45 60 mA
20 50 70
mA
35 70 100
200
1000
1500 V/μs
1 15 20 V/μs
2.6 °C/W
60 °C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
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ADV ADS4CH80
 
ADV
FIG.2: Maximum on-state power dissipation
5
4
3
2
360° Full Cycle
1
0 1234 5
Power Dissipation(W)
FIG.4: Maximum transient thermal impedance
105
104
     
ADS4CH60/80
FIG.3: Typical RMS on-state current VS
Allowable case Temperature
150
120
90
60
360° Full Cycle
30
0
012345
R.M.S On-state Current(A)
FIG.5: Rated surge
( Non-Repetitive)
102
on-state
current
f=60Hz
f=50Hz
10
103
102
101
0.1 1 10
Rth(j-c)(°C/W),Transient Thermal Impedance
Tj=25°C Max
1
0 5 10 15 20 25 30 35 40
ITSM(A),Surge On-State Current
FIG.6: Gate trigger current VS Junction
temperature
150
125
100
75
50
25
0
-25
-50
0 50 100 150 200 250
IGT(Tj)/IGT(25°C) x 100(%)
 
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