40GP60J IGBT Datasheet

40GP60J Datasheet, PDF, Equivalent


Part Number

40GP60J

Description

POWER MOS 7 IGBT

Manufacture

Advanced Power Technology

Total Page 6 Pages
Datasheet
Download 40GP60J Datasheet


40GP60J
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APT40GP60J
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 400V, 25A
• 200 kHz operation @ 400V, 16A
• SSOA rated
EE
G C SOT-227
ISOTOP®
C"UL Recognized"
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT40GP60J
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
86
40
160
160A @ 600V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX UNIT
600
3 4.5 6
Volts
2.2 2.7
2.1
250
2500
µA
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

40GP60J
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching SOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 40A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 600V
Inductive Switching (25°C)
VCC(Peak) = 400V
VGE = 15V
IC = 40A
RG = 5
TJ = +25°C
MIN
160
Inductive Switching (125°C)
VCC(Peak) = 400V
VGE = 15V
IC = 40A
RG = 5
TJ = +125°C
TYP
4610
395
25
7.5
135
30
40
APT40GP60J
MAX UNIT
pF
V
nC
A
20
29
64
45
385
644
352 450
20
29
89
69
385
972
615 950
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RΘJC
RΘJC
WT
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
MIN TYP MAX UNIT
.44
°C/W
N/A
29.2 gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.


Features www.DataSheet4U.com APT40GP60J 600V P OWER MOS 7® IGBT The POWER MOS 7® IG BT is a new generation of high voltage power IGBTs. Using Punch Through Techno logy this IGBT is ideal for many high f requency, high voltage switching applic ations and has been optimized for high frequency switchmode power supplies. Low Conduction Loss • Low Gate Cha rge • Ultrafast Tail Current shutoff • 100 kHz operation @ 400V, 25A • 200 kHz operation @ 400V, 16A • SSOA rated EE G C SOT-227 ISOTOP® C"UL R ecognized" G E MAXIMUM RATINGS Symbo l Parameter All Ratings: TC = 25°C un less otherwise specified. APT40GP60J UNIT VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Volta ge Gate-Emitter Voltage Gate-Emitter Vo ltage Transient Continuous Collector Cu rrent @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Powe r Dissipation Operating and Storage Junction Temperature Range .
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