INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD857
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB762
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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