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ST2318SRG

Stanson Technology

N-Channel Enhancement Mode MOSFET


Description
ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as ce...



Stanson Technology

ST2318SRG

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