Power MOSFET. IRFI4321PBF Datasheet

IRFI4321PBF MOSFET. Datasheet pdf. Equivalent

Part IRFI4321PBF
Description Power MOSFET
Feature   Applications  Motion Control Applications  High Efficiency Synchronous Rectification in SMPS  U.
Manufacture Infineon
Datasheet
Download IRFI4321PBF Datasheet

PD - 97104 IRFI4321PbF Applications l Motion Control Applic IRFI4321PBF Datasheet
  Applications  Motion Control Applications  High Efficien IRFI4321PBF Datasheet
Recommendation Recommendation Datasheet IRFI4321PBF Datasheet





IRFI4321PBF
 
Applications
Motion Control Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High Frequency Circuits
 
IRFI4321PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
RDS(on) max.
ID
150V
12.2m
16m
34A
Benefits
Low RDSON Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching & EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFI4321PbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI4321PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
34
21
140
46
0.37
± 30
170
-55 to + 150
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
 
°C 
 
 
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient (PCB Mount)
1
Typ.
–––
–––
Max.
2.73
65
Units
°C/W
2017-04-27



IRFI4321PBF
  IRFI4321PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
IGSS  
RG(int)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
150 –––
––– 190
––– 12.2
3.0 –––
––– –––
––– –––
––– –––
––– –––
––– 0.8
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
16 m VGS = 10V, ID = 20A
5.0 V
20 µA
1.0 mA 
100
-100
nA  
–––
VDS = VGS, ID = 250µA
VDS = 150 V, VGS = 0V
VDS = 150V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Trans conductance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
50 ––– ––– S VDS = 50V, ID = 20A
––– 73 110  
ID = 20A
––– 24 ––– nC VDS = 75V
––– 20 –––  
VGS = 10V
––– 18 –––
VDD = 75V
–––
–––
29
27
–––
–––
ns
ID = 20A
RG= 2.5
––– 20 –––
VGS = 10V
––– 4440 –––
VGS = 0V
––– 390 ––– pF   VDS = 50V
––– 84 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
34
140
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.3 V TJ = 25°C,IS = 20A,VGS = 0V 
––– 86 130 ns IF = 20A
––– 310 470 nC VR = 128V
––– 6.7 ––– A  di/dt= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.85mH, RG = 25, IAS = 20A, VGS =10V. Part not recommended for use above this value.
Pulse width 400µs; duty cycle 2%.
Ris measured at TJ approximately 90°C.
2 2017-04-27





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