Power Transistor. BDW74D Datasheet

BDW74D Transistor. Datasheet pdf. Equivalent

Part BDW74D
Description Silicon PNP Darlington Power Transistor
Feature isc Silicon PNP Darlington Power Transistor BDW74/A/B/C/D DESCRIPTION ·Collector Current -IC= -8A .
Manufacture INCHANGE
Datasheet
Download BDW74D Datasheet

BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARL BDW74D Datasheet
isc Silicon PNP Darlington Power Transistor BDW74/A/B/C/D BDW74D Datasheet
Recommendation Recommendation Datasheet BDW74D Datasheet





BDW74D
isc Silicon PNP Darlington Power Transistor
BDW74/A/B/C/D
DESCRIPTION
·Collector Current -IC= -8A
·High DC Current Gain-hFE= 750(Min.)@ IC= -3A
·Complement to Type BDW73/A/B/C/D
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
BDW74
-45
VCBO
Collector-Base
Voltage
BDW74A
BDW74B
BDW74C
-60
-80
-100
BDW74D
-120
BDW74
-45
VCEO
Collector-Emitter
Voltage
BDW74A
BDW74B
BDW74C
-60
-80
-100
BDW74D
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
IB
Base Current-Continuous
-0.3
Collector Power Dissipation
PC
@ Ta=25
Collector Power Dissipation
@ TC=25
2
80
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-c Thermal Resistance, Junction to Case
isc websitewww.iscsemi.com
MAX UNIT
1.56 /W
62.5 /W
1 isc & iscsemi is registered trademark



BDW74D
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW74
BDW74/A/B/C/D
MIN TYP.
-45
MAX
UNIT
BDW74A
-60
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW74B IC= -30mA; IB= 0
-80
V
BDW74C
-100
BDW74D
-120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
-2.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA
-4.0
V
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -3V
-2.5
V
VECF
C-E Diode Forward Voltage
IF= -8A
-3.5
V
BDW74
VCE= -30V; IB= 0
BDW74A VCE= -30V; IB= 0
ICEO
Collector Cutoff Current BDW74B VCE= -40V; IB= 0
-0.5 mA
BDW74C VCE= -50V; IB= 0
BDW74D VCE= -60V; IB= 0
BDW74
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TJ= 150
BDW74A
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TJ= 150
ICBO
Collector Cutoff Current BDW74B
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TJ= 150
BDW74C
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TJ= 150
BDW74D
VCB= -120V; IE= 0
VCB= -120V; IE= 0; TJ= 150
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.2
-5.0
-0.2
-5.0
-0.2
-5.0
mA
-0.2
-5.0
-0.2
-5.0
-2.0 mA
hFE-1
DC Current Gain
IC= -3A; VCE= -3V
750
20000
hFE-2
DC Current Gain
IC= -8A; VCE= -3V
100
Switching times
ton
Turn-on Time
toff
Turn-off Time
isc websitewww.iscsemi.com
IC= -3A; IB1= -IB2= -12mA;
VBE(off)= 3.5V, RL=10Ω
1.0
μs
5.0
μs
2 isc & iscsemi is registered trademark





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