Purpose Transistors. BC846BDW1 Datasheet

BC846BDW1 Transistors. Datasheet pdf. Equivalent

Part BC846BDW1
Description Dual General Purpose Transistors
Feature BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals These transistors are de.
Manufacture ON Semiconductor
Datasheet
Download BC846BDW1 Datasheet

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transi BC846BDW1 Datasheet
BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose T BC846BDW1T1 Datasheet
Dual General Purpose Transistors NPN Duals These transistor BC846BDW1T1 Datasheet
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Ser BC846BDW1T1G Datasheet
Recommendation Recommendation Datasheet BC846BDW1 Datasheet





BC846BDW1
BC846BDW1, BC847BDW1,
BC848CDW1
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848 Unit
Collector −Emitter Voltage
VCEO
65
45
30
V
Collector −Base Voltage
VCBO
80
50
30
V
Emitter −Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current −
Continuous
IC 100 100 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
Per Device
FR− 5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
Thermal Resistance,
Junction to Ambient
RqJA
Junction and Storage Temperature
Range
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in
Max
380
250
3.0
328
−55 to +150
Unit
mW
mW
mW/°C
°C/W
°C
www.onsemi.com
SOT−363/SC−88
CASE 419B
STYLE 1
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
MARKING DIAGRAM
6
1x MG
G
1
1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
August, 2016 − Rev. 11
1
Publication Order Number:
BC846BDW1T1/D



BC846BDW1
BC846BDW1, BC847BDW1, BC848CDW1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CEO
V
65 −
45 −
30 −
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846
BC847
BC848
V(BR)CES
V
80 −
50 −
30 −
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CBO
V
80 −
50 −
30 −
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846
BC847
BC848
V(BR)EBO
V
6.0 −
6.0 −
5.0 −
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
− 15 nA
− 5.0 mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B
BC847C, BC848C
hFE
− 150 −
− 270 −
200 290 450
420 520 800
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
V
− 0.25
− 0.6
VBE(sat)
− 0.7 −
− 0.9 −
V
VBE(on)
mV
580 660 700
− − 770
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100 −
MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
pF
− 4.5
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
dB
− 10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)