N-Channel MOSFET. NTR4501NT1G Datasheet

NTR4501NT1G MOSFET. Datasheet pdf. Equivalent

Part NTR4501NT1G
Description N-Channel MOSFET
Feature NTR4501NT1G N-Channel MOSFET SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1.
Manufacture CANYU
Datasheet
Download NTR4501NT1G Datasheet

SMD Type N-Channel MOSFET NTR4501NT1G ■ Features ● VDS (V) NTR4501NT1G Datasheet
NTR4501NT1G N-Channel MOSFET SOT-23 2.9 +0.1 -0.1 0.4 +0.1 NTR4501NT1G Datasheet
Recommendation Recommendation Datasheet NTR4501NT1G Datasheet





NTR4501NT1G
NTR4501NT1G
N-Channel MOSFET
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
Features
VDS (V) = 20V
ID = 3.2 A (VGS = 4.5V)
RDS(ON) 70mΩ (VGS = 4.5V)
RDS(ON) 85mΩ (VGS = 2.5V)
Leading Planar Technology for Low Gate Charge / Fast Switching
2.5 V Rated for Low Voltage Gate Drive
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note.1)
TA=25
TA=85
Pulsed Drain Current @ tP=10us
Power Dissipation
(Note.1)
Thermal Resistance.Junction- to-Ambient (Note.1)
(Note.2)
Lead Temperature for Soldering Purposes (Note.3)
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TL
TJ
Tstg
Rating
20
±12
3.2
2.4
10
1.25
100
300
260
150
-55 to 150
Note.1: Surfacemounted on FR4 board using 1 in sq pad size.
Note.2: Surfacemounted on FR4 board using the minimum recommended pad size.
Note.3: 1/8” from case for 10 s.
Unit
V
A
W
/W



NTR4501NT1G
NTR4501NT1G
N-Channel MOSFET
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Charge Time
Discharge Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
ta
tb
Qrr
IS
VSD
Test Conditions
ID=250μA, VGS=0V (Note.1)
VDS=16V, VGS=0V, TJ=25
VDS=16V, VGS=0V, TJ=85
VDS=0V, VGS=±12V
VDS=VGS , ID=250μA (Note.1)
VGS=4.5V, ID=3.6A
VGS=2.5V, ID=3.1A
VDS=5V, ID=3.6A
VGS=0V, VDS=10V, f=1MHz
VGS=4.5V, VDS=10V, ID=3.6A
VGS=4.5V, VDS=10V, ID=3.6A,RG=6Ω
(Note.2)
IS= 1.6A, dI/dt= 100A/μs,VGS=0
IS=1.6A,VGS=0V
Note.1: Pulse Test: Pulse width 300 us, duty cycle 2%.
Note.2: Switching characteristics are independent of operating junction temperatures.
Min
20
0.65
Typ Max Unit
24.5 V
1.5
μA
10
±100 nA
1.2 V
70 80 mΩ
85 105
9S
200
80 pF
50
2.4 6
0.5 nC
0.6
6.5
12
12
3 ns
7.1
5
1.9
3 nC
1.6 A
0.8 1.2 V
Marking
Marking
TR1*





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