FLASH MEMORY. IS25WP256 Datasheet

IS25WP256 MEMORY. Datasheet pdf. Equivalent

Part IS25WP256
Description 256MBIT SERIAL FLASH MEMORY
Feature IS25LP256 IS25WP256 256MBIT SERIAL FLASH MEMORY WITH 166MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFA.
Manufacture ISSI
Datasheet
Download IS25WP256 Datasheet

IS25LP256 IS25WP256 256MBIT SERIAL FLASH MEMORY WITH 166MHZ IS25WP256 Datasheet
IS25LP256D IS25WP256D 256Mb SERIAL FLASH MEMORY WITH 166/133 IS25WP256D Datasheet
Recommendation Recommendation Datasheet IS25WP256 Datasheet





IS25WP256
IS25LP256
IS25WP256
256MBIT
SERIAL FLASH MEMORY WITH 166MHZ MULTI I/O SPI & QUAD
I/O QPI DTR INTERFACE
ADVANCED DATA SHEET



IS25WP256
IS25LP256, IS25WP256
256MBIT
SERIAL FLASH MEMORY WITH 166MHZ MULTI I/O SPI &
QUAD I/O QPI DTR INTERFACE
ADVANCED INFORMATION
FEATURES
Industry Standard Serial Interface
- IS25LP256: 256Mbit/32Mbyte
- IS25WP256: 256Mbit/32Mbyte
- 3 or 4 Byte Addressing Mode
- Supports Standard SPI, Fast, Dual, Dual
I/O, Quad, Quad I/O, SPI DTR, Dual I/O
DTR, Quad I/O DTR, and QPI
- Software & Hardware Reset
- Supports Serial Flash Discoverable
Parameters (SFDP)
High Performance Serial Flash (SPI)
- 80MHz Normal Read
- Up to166Mhz Fast Read
- Up to 80MHz DTR (Dual Transfer Rate)
- Equivalent Throughput of 664 Mb/s
- Selectable Dummy Cycles
- Configurable Drive Strength
- Supports SPI Modes 0 and 3
- More than 100,000 Erase/Program Cycles
- More than 20-year Data Retention
Low Power with Wide Temp. Ranges
- Single Voltage Supply
IS25LP: 2.30V to 3.60V
IS25WP: 1.65V to 1.95V
- 10 mA Active Read Current
- 8 µA Standby Current
- 1 µA Deep Power Down
- Temp Grades:
Extended: -40°C to +105°C
Extended+: -40°C to +125°C
Auto Grade: up to +125°C
Note: Extended+ should not be used for Automotive.
Advanced Security Protection
- Software and Hardware Write Protection
- Advanced Sector/Block Protection
- Top/Bottom Block protection
- Power Supply Lock Protection
- 4x256 Byte Dedicated Security Area
with OTP User-lockable Bits
- 128 bit Unique ID for Each Device
(Call Factory)
Flexible & Efficient Memory Architecture
- Chip Erase with Uniform Sector/Block
Erase (4/32/64 Kbyte)
- Program 1 to 256 Byte per Page
- Program/Erase Suspend & Resume
Efficient Read and Program modes
- Low Instruction Overhead Operations
- Continuous Read 8/16/32/64 Byte Burst
- Selectable Burst Length
- QPI for Reduced Instruction Overhead
- AutoBoot Operation
Industry Standard Pin-out & Packages
- M =16-pin SOIC 300mil
- L = 8-contact WSON 8x6mm
- G = 24-ball TFBGA 6x8mm (4x6 ball array)(1)
- H = 24-ball TFBGA 6x8mm (5x5 ball array)(1)
- KGD (Call Factory)
Note: For the additional RESET# pin option, call Factory
Integrated Silicon Solution, Inc.- www.issi.com
Rev.00A
05/14/2015
2





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