Signal MOSFET. S-L2SK801LT1G Datasheet

S-L2SK801LT1G MOSFET. Datasheet pdf. Equivalent

Part S-L2SK801LT1G
Description Small Signal MOSFET
Feature LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 310 mAmps, 60 Volts N–Channel SOT–23 • Pb−Free Pa.
Manufacture LRC
Datasheet
Download S-L2SK801LT1G Datasheet

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 310 mAmps, S-L2SK801LT1G Datasheet
Recommendation Recommendation Datasheet S-L2SK801LT1G Datasheet





S-L2SK801LT1G
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
310 mAmps, 60 Volts
N–Channel SOT–23
Pb−Free Package is Available.
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Drain Current
– Continuous TC = 25°C (Note 1.)
–– CPounlstienuotu<s 10us
Symbol
VDSS
VDGR
Value
60
60
Unit
Vdc
Vdc
ID 310 mAdc
IDM 1200
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
VGS
VGSM
±20 Vdc
±40 Vpk
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
RθJA
PD
RθJA
TJ, Tstg
556
300
2.4
417
ā55 to
+150
°C/W
mW
mW/°C
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. FR–5 = 1.0 x 0.75 x 0.062 in.
3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
ORDERING INFORMATION
Device
L2SK801LT1G
S-L2SK801LT1G
L2SK801LT3G
S-L2SK801LT3G
Marking
Shipping
801 3000 Tape & Reel
801 10000 Tape & Reel
L2SK801LT1G
S-L2SK801LT1G
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
310 mAMPS
60 VOLTS
R DS(on) = 1.5 W
V GS(th) = 1.8 V
N - Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
801
12
Gate Source
801 = Device Code
M = Month Code
Rev .O 1/4



S-L2SK801LT1G
LESHAN RADIO COMPANY, LTD.
L2SK801LT1G , S-L2SK801LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = –ā20 Vdc)
TJ = 25°C
TJ = 125°C
V(BR)DSS
IDSS
IGSSF
IGSSR
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
On–State Drain Current
(VDS 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
VGS(th)
ID(on)
VDS(on)
rDS(on)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Min
60
1.0
500
Typ Max Unit
– – Vdc
– 1.0 µAdc
– 500
– 100 nAdc
– –100 nAdc
1.8 2.2 Vdc
– – mA
Vdc
– 3.75
– 0.375
Ohms
1.5 2.5
1.7 2.5
Forward Transconductance
(VDS 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , ID ^ 500 mAdc,
RG = 25 , RL = 50 , Vgen = 10 V)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, V GS = 0 V)
Source Current Continuous
(Body Diode)
Source Current Pulsed
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
gFS 80 – – mmhos
Ciss
17 50 pF
Coss
10 25 pF
Crss – 2.5 5.0 pF
td(on)
td(off)
VSD
IS
ISM
7 20 ns
11 40 ns
– –1.5 Vdc
– –115 mAdc
– –800 mAdc
Rev .O 2/4





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