Signal MOSFET. L2N7002KWT1G Datasheet

L2N7002KWT1G MOSFET. Datasheet pdf. Equivalent

Part L2N7002KWT1G
Description Small Signal MOSFET
Feature L2N7002KWT1G S-L2N7002KWT1G Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SC-70 1. FEATURES ● W.
Manufacture LRC
Datasheet
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L2N7002KWT1G S-L2N7002KWT1G Small Signal MOSFET 380 mAmps, 6 L2N7002KWT1G Datasheet
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L2N7002KWT1G
L2N7002KWT1G
S-L2N7002KWT1G
Small Signal MOSFET
380 mAmps, 60 Volts N–Channel SC-70
1. FEATURES
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
ESD Protected
2. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2N7002KWT1G SK 3000/Tape&Reel
L2N7002KWT3G
SK 10000/Tape&Reel
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Drain–Source Voltage
Gate-Source Voltage
Drain Current
– Steady State TA = 25°C
– t<5s
TA = 85°C
TA = 25°C
TA = 85°C
Pulsed Drain Current (tp=10μs)
Source Current (Body Diode)
Symbol
VDSS
VGS
ID
IDM
IS
Limits
60
±20
320
230
380
270
1.5
300
Unit
Vdc
Vdc
mAdc
A
mA
4. THERMAL CHARACTERISTICS
Parameter
Total Device Dissipation(Note 1)
– Steady State
– t<5s
Junction−to−Ambient(Note 1)
– Steady State
– t<5s
Lead Temperature for Soldering
Purposes (1/8 " from case for 10 s)
Junction and Storage temperature
Gate−Source ESD Rating(HBM,
Method 3015)
1. FR–5 = 1.0×0.75×0.062 in.
Symbol
PD
RΘJA
TL
Limits
300
420
417
300
260
Unit
mW
ºC/W
ºC
TJ,Tstg −55+150 ºC
ESD
2000
V
Leshan Radio Company, LTD.
Rev.E Mar 2016
SC70(SOT-323)
1/6



L2N7002KWT1G
L2N7002KWT1G, S-L2N7002KWT1G
Small Signal MOSFET
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250μAdc)
Symbol
Min.
Typ.
Max.
VBRDSS
60
-
-
Unit
Vdc
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current TJ = 25°C
VBRDSS/TJ
-
-
mV/ºC
71 -
- 1.0 μAdc
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C IDSS
500
(VGS = 0, VDS = 50 Vdc)
TJ = 25°C
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
Gate–Body Leakage Current, Reverse
(VGS = - 20 Vdc)
IGSSF
IGSSR
-
-
-
- 100 nAdc
μAdc
- 10
μAdc
- -10
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250μAdc)
Negative Threshold Temperature Coefficient
Static Drain–Source On–State Resistance
VGS(th)
VGS(TH)/TJ
RDS(on)
1.0
-
Vdc
- 2.5
4 - mV/ºC
Ω
(VGS = 10 Vdc, ID = 500 mAdc)
- - 2.3
(VGS = 5.0 Vdc, ID = 50 mAdc)
- - 2.7
Forward Transconductance
(VDS = 5.0 Vdc, ID = 200 mAdc)
gfs
80 -
mS
-
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
- 34 -
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
pF
Coss
-3-
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
- 2.2 -
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
-
3.8
-
ns
Rise Time
VDS = 10 V, VGEN = 10 V,
tr
- 3.4 -
Turn-Off Delay Time
ID = 500 mA
td(off)
-
19
-
Fall Time
BODY–DRAIN DIODE RATINGS
tf - 12 -
Diode Forward On–Voltage
(IS = 115 mAdc, VGS = 0 V)
TJ = 25°C
- - 1.4 Vdc
VSD
TJ = 85°C
- 0.7 -
2.Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
Leshan Radio Company, LTD.
Rev.E Mar 2016
2/6





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