Trench MOSFET. PMF63UNE Datasheet

PMF63UNE MOSFET. Datasheet pdf. Equivalent

Part PMF63UNE
Description N-channel Trench MOSFET
Feature PMF63UNE 20 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-c.
Manufacture nexperia
Datasheet
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PMF63UNE
PMF63UNE
20 V, N-channel Trench MOSFET
20 April 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323
(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
LED driver
Power management
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 2.2 A
- 57 65 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.



PMF63UNE
Nexperia
PMF63UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S souce
3 D drain
Simplified outline
3
Graphic symbol
D
12
SC-70 (SOT323)
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMF63UNE
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
7. Marking
Table 4. Marking codes
Type number
PMF63UNE
Marking code
[1]
Z%V
[1] % = placeholder for manufacturing site code
PMF63UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 April 2016
© Nexperia B.V. 2017. All rights reserved
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