N-channel MOSFET. GSM4422 Datasheet

GSM4422 MOSFET. Datasheet pdf. Equivalent

Part GSM4422
Description N-channel MOSFET
Feature 30V N-Channel Enhancement Mode MOSFET Product Description GSM4422, N-Channel enhancement mode MOSFE.
Manufacture Globaltech
Datasheet
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30V N-Channel Enhancement Mode MOSFET Product Description G GSM4422 Datasheet
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GSM4422
30V N-Channel Enhancement Mode MOSFET
Product Description
GSM4422, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line power
loss are needed in commercial industrial surface
mount applications.
Packages & Pin Assignments
GSM4422SF (SOP-8)
Features
30V/ 6.8A,RDS(ON)=36m@VGS=10V
30V/ 6.0A,RDS(ON)=42m@VGS=4.5V
30V/ 5.2A,RDS(ON)=50m@VGS=2.5V
Super high density cell design for extremely
low RDS (ON)
SOP-8P package design
Applications
DC/DC Converter
Load Switch
CCFL Inverter
Power Management in Notebook Computer
1 Source 5 Drain
2 Source 6 Drain
3 Source 7 Drain
4 Gate 8 Drain
Ordering Information
GS P/N
GSM4422 S F
Package Code
Pb Free Code
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GSM4422
Marking Information
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25ºC
TA=70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25ºC
TA=70ºC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
30
±12
6.8
5.2
30
2.6
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
ºC
ºC
ºC/ W
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