TVS Diodes. GSE0520Q Datasheet

GSE0520Q Diodes. Datasheet pdf. Equivalent

Part GSE0520Q
Description Ultra-low Capacitance Bidirectional Micro Packaged TVS Diodes
Feature GSE0520Q Ultra-low Capacitance Bidirectional Micro Packaged TVS Diodes for ESD Protection Product D.
Manufacture Globaltech
Datasheet
Download GSE0520Q Datasheet

GSE0520Q Ultra-low Capacitance Bidirectional Micro Packaged GSE0520Q Datasheet
Recommendation Recommendation Datasheet GSE0520Q Datasheet





GSE0520Q
GSE0520Q
Ultra-low Capacitance Bidirectional Micro Packaged TVS Diodes for
ESD Protection
Product Description
The GSE0520Q is designed to protect sensitive
electronics from damage or latch up due to ESD,
lightning, and other voltage induced transient
events.
The DFN1006 package type is provided for easy
PCB layout.
Features
„ Max. peak pulse power : PPP=20W at
tP=8/20us
„ Stand-off Voltage : 5.0V
„ Low capacitance (<0.5pF) for high-speed
interfaces
„ No insertion loss to 3.0GHz
„ Replacement for MLV
„ Protects I/O Port
„ Low Clamping Voltage
„ Low Leakage
„ Solid-state Punch-Through TVS Process
technology
„ IEC61000-4-2(ESD) ±15kV (air), ±8kV
(contact)
„ Meets MSL 1 Requirements
„ RoHS Compliant, 100%Pb & Halogen Free
Applications
„ High Speed Line :USB1.0/2.0, VGA, DVI, SDI
„ Serial and Parallel Ports
„ Notebooks, Desktops, Servers
„ Projection TV
„ Cellular handsets and accessories
„ Portable instrumentation
„ Peripherals
Packages & Pin Assignments
Marking & Orientation
Part Number
GSE0520QFF
DFN1006
Package
DFN1006
Marking
S
www.gs-power.com 1



GSE0520Q
Ordering Information
GS P/N
GSE0520Q F F
Package Code
Pb Free Code
Part Number
GSE0520QFF
Package
DFN1006
Quantity
10000 PCS
Absolute Maximum Ratings
(TA=25ºC Unless otherwise noted)
Symbol
Parameter
Typical
Unit
Ppk Peak Pulse Power (tP=8/20μs)
ESD Per IEC61000-4-2 (Air)
VPP
ESD Per IEC61000-4-2 (Contact)
20 W
±15 kV
±8 kV
TJ Operating Junction Temperature Range
-55 to +150
ºC
TSTG
Storage Temperature Range
-55 to +150
ºC
TL Soldering Temperature, t(max)=10s
260 ºC
Note : Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the
device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these
limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
Electrical Characteristics
(TA=25ºC Unless otherwise noted)
Symbol
Parameter
VRWM
VBR
Rdyn
IR
VC
Reverse Stand-off
Voltage
Reverse Breakdown
Voltage
Resistance
Reverse Leakage
Current
Clamping Voltage
CJ Junction Capacitance
Conditions
-
IR=1mA
-
VRWM=5V
IPP=1A (8/20μs)
VR=0V,f=1MHz
Min Typ Max Unit
5.0 V
6.0 10 V
1.4 Ω
1.0 uA
15 V
0.3 0.5 pF
www.gs-power.com
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)