NPN Silicon. GST2SC3838 Datasheet

GST2SC3838 Silicon. Datasheet pdf. Equivalent

Part GST2SC3838
Description High-Frequency Amplifier Transistor NPN Silicon
Feature GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description This device is desig.
Manufacture Globaltech
Datasheet
Download GST2SC3838 Datasheet

GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon GST2SC3838 Datasheet
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GST2SC3838
GST2SC3838
High-Frequency Amplifier Transistor NPN Silicon
Product Description
This device is designed as a general purpose
amplifier and switch.
Features
„ Collector-Emitter Voltage : 11V
„ Collector Current : 50mA
„ Lead(Pb)-Free
Packages & Pin Assignments
GST2SC3838F(SOT-23)
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N
GST2SC3838F
Package
SOT-23
Part Marking
AD
Ordering Information
GS P/N
GST2SC3838 F
Part Number
GST2SC3838F
Pb Free Code
Package
SOT-23
Quantity
3000 PCS
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GST2SC3838
Absolute Maximum Ratings
TA=25°C
Symbol
Conditions
VCEO
Collector-Emitter Voltage
VCBO
VEBO
IC
PD
TJ, TSTG
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation TA=25°C
Junction and Storage Temperature Range
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
Conditions
BVCEO
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
BVCBO
BVEBO
ICBO
IEBO
Collector-Base Breakdown Voltage
(IC=10uA)
Collector-Emitter Breakdown Voltage
(IE=10uA)
Collector Cutoff Current
(VCB=10V)
Emitter Cutoff Current
(VEB=2.0V)
Symbol
Conditions
hFE
fT
VCE(sat)
Cob
rbb’cc
NF
DC Current Gain
(IC=5.0mA, VCE=10V)
Transition Frequency
(VCE=10V, IE=-10mA, f=500MHz)
Collector-Emitter Saturation Voltage
(IC=10mA, IB=5mA)
Output Capacitance
(VCB=10V, IE=0A, f=1MHz)
Collector-Base Time Constant
(VCB=10V, IC=10mA, f=31.8MHz)
Noise Factor
(VCE=6V, IC=2mA, f=500MHz, Rg=50)
Value
11
20
3.0
50
200
-55 to +150
Unit
V
V
V
mA
mW
°C
Min Max
11 -
20 -
3.0 -
- 0.5
-
Min
56
0.5
Typ Max
- 180
1.4 3.2
-
- - 0.5
- 0.8 1.5
- 4 12
- 3.5 -
Unit
V
V
V
uA
uA
Unit
-
GHz
V
pF
ps
dB
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