Purpose Transistor. GSTSS8050LT1 Datasheet

GSTSS8050LT1 Transistor. Datasheet pdf. Equivalent

Part GSTSS8050LT1
Description NPN General Purpose Transistor
Feature GSTSS8050LT1 NPN General Purpose Transistor Product Description This device is designed as a genera.
Manufacture Globaltech
Datasheet
Download GSTSS8050LT1 Datasheet

GSTSS8050LT1 NPN General Purpose Transistor Product Descrip GSTSS8050LT1 Datasheet
Recommendation Recommendation Datasheet GSTSS8050LT1 Datasheet





GSTSS8050LT1
GSTSS8050LT1
NPN General Purpose Transistor
Product Description
This device is designed as a general purpose
amplifier and switch.
Packages & Pin Assignments
SOT-23
Features
„ Collector-Emitter Voltage : 25V
„ Collector-Base Voltage : 40V
„ Collector Current : 1500mA
„ Lead(Pb)-Free
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N
GSTSS8050LT1F(P)
GSTSS8050LT1F(Q)
GSTSS8050LT1F(R)
GSTSS8050LT1F(S)
Package
SOT-23
SOT-23
SOT-23
SOT-23
Ordering Information
Part Marking
1HA
1HC
1HE
1HG
Part Number
GSTSS8050LT1F(P or Q or R or S)
Package
SOT-23
Quantity
3000 PCS
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GSTSS8050LT1
Absolute Maximum Ratings
(TA=25°C unless otherwise noted)
Symbol
Conditions
VCEO
Collector-Emitter Voltage
VCBO
VEBO
IC
PD
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation FR-5 Board (1)
TA=25°C
Derate above 25°C
RΘJA
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate (2)
TA=25°C
Derate above 25°C
RΘJA
Thermal Resistance, Junction to Ambient
TJ Junction Temperature Range
TSTG
Storage Temperature Range
Note 1.FR-5=1.0x0.75x0.062 in
Note 2.Alumina=0.4x0.3x0.024 in. 99.5% alumina
Typical
25
40
5.0
1500
225
1.8
556
300
2.4
417
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
Conditions
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
Collector-Emitter Breakdown Voltage
(IC=0.1mA, IB=0mA)
Collector-Base Breakdown Voltage
(IC=100uA, IE=0mA)
Emitter-Base Breakdown Voltage
(IE=100uA, IC=0mA)
Collector-Base Cutoff Current
(VCB=35V, IE=0mA)
Emitter-Base Cutoff Current
(VEB=4.0V, IC=0mA)
DC Current Gain
(IC=100mA, VCE=1.0V)
Collector-Emitter Saturation Voltage
(IC=800mA, IB=80mA)
Min
25
40
5.0
-
-
100
-
Classification of hFE
Rank
Range
Marking
P
100-200
1HA
Q
150-300
1HC
Max
-
-
-
0.15
0.15
600
0.5
Unit
V
V
V
uA
uA
-
V
R
200-400
1HE
S
300-600
1HG
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