PNP Transistors. GSTMMBT5401 Datasheet

GSTMMBT5401 Transistors. Datasheet pdf. Equivalent

Part GSTMMBT5401
Description High Voltage PNP Transistors
Feature GSTMMBT5401 High Voltage PNP Transistors Product Description This device is designed as a general p.
Manufacture Globaltech
Datasheet
Download GSTMMBT5401 Datasheet

GSTMMBT5401 High Voltage PNP Transistors Product Descriptio GSTMMBT5401 Datasheet
Recommendation Recommendation Datasheet GSTMMBT5401 Datasheet





GSTMMBT5401
GSTMMBT5401
High Voltage PNP Transistors
Product Description
This device is designed as a general purpose
amplifier and switch.
Packages & Pin Assignments
GSTMMBT5401F(SOT-23)
Features
„ Collector-Emitter Voltage : -150V
„ Collector-Base Voltage : -160V
„ Collector Current-Continuous : -500mA
„ Lead(Pb)-Free
Pin Description
1 Base
2 Emitter
3 Collector
Marking Information
P/N
GSTMMBT5401F
Package
SOT-23
Part Marking
2L
Ordering Information
GS P/N
GSTMMBT5401 F
Pb Free Code
Part Number
GSTMMBT5401F
Package
SOT-23
Quantity
3000 PCS
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GSTMMBT5401
Absolute Maximum Ratings
TA=25°C
Symbol
Conditions
VCEO
VCBO
VEBO
IC(DC)
PD
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Dissipation FR-5 Board (1)
TA=25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate(2)
PD TA=25°C
Derate above 25°C
RθJA Thermal Resistance Junction to Ambient
TJ Junction Temperature Range
TSTG
Storage Temperature Range
Note 1: FR-5=1.0 x 0.75 x 0.062 in
Note 2: Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
Conditions
Collector-Emitter Breakdown Voltage (3)
(IC=-1.0mA, IB=0mA)
Collector-Base Breakdown Voltage
(IC=-100uA, IE=0mA)
Emitter-Base Breakdown Voltage
(IE=-10uA, IC=0mA)
Collector Cutoff Current
(VCE=-120V, IE=0mA)
DC Current Gain (IC=-1.0mA, VCE=-5.0V)
hFE DC Current Gain (IC=-10mA, VCE=-5.0V)
VCE(sat)
VBE(sat)
fT
Cobo
hfe
NF
DC Current Gain (IC=-50mA, VCE=-5.0V)
Collector-Emitter Saturation Voltage
(IC=-10mA, IB=-1.0mA)
(IC=-50mA, IB=-5.0mA)
Base-Emitter Saturation Voltage
(IC=-10mA, IB=-1.0mA)
(IC=-50mA, IB=-5.0mA)
Current-Gain-Bandwidth Product (4)
(IC=-10mA, VCE=-10V, f=100MHz)
Output Capacitance
(VCB=-10V, IE=0mA, f=1.0MHz)
Small-Signal Current Gain
(IC=-1.0mA, VCE=-10V, f=1.0 kHz)
Noise Figure
(IC=-200μA, VCE=-5V, RS=10Ω, f=1.0kHz)
Value
-150
-160
-5.0
-500
225
1.8
556
300
2.4
417
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
°C
Min
-150
-160
-5.0
-
50
60
50
-
-
-
-
100
-
40
-
Max
-
-
-
-50
-
240
-
-0.2
-0.5
-1.0
-1.0
300
6.0
200
8.0
Unit
V
V
V
uA
-
-
-
V
V
MHz
pF
-
dB
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