Planar Transistors. GSTD772 Datasheet

GSTD772 Transistors. Datasheet pdf. Equivalent

Part GSTD772
Description PNP Epitaxial Planar Transistors
Feature GSTD772 PNP Epitaxial Planar Transistors Product Description This device is designed as a general p.
Manufacture Globaltech
Datasheet
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GSTD772 PNP Epitaxial Planar Transistors Product Descriptio GSTD772 Datasheet
Recommendation Recommendation Datasheet GSTD772 Datasheet





GSTD772
GSTD772
PNP Epitaxial Planar Transistors
Product Description
This device is designed as a general purpose
amplifier and switch.
Features
„ Lead(Pb)-Free
Packages & Pin Assignments
TO-252
Pin Description
1 Base
2 Collector
3 Emitter
Marking Information
P/N
GSTD772F
Package
TO-252
Ordering Information
Rank
(R) / (O) / (Y) / (GR)
Part Marking
B772
Part Number
GSTD772F(R or O or Y or GR)
Package
TO-252
Quantity
2500 PCS
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GSTD772
Absolute Maximum Ratings
TA=25°C
Symbol
Conditions
VCEO
VCBO
VEBO
IC(DC)
IC(Pulse)
IB(Pulse)
PD
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse) (1)
Base Current
Total Device Dissipation
TJ Junction Temperature Range
TSTG
Storage Temperature Range
Notes: 1.PW350us, duty cycle2%
TC=25°C
TA=25°C
Typical
-30
-40
-5.0
-3.0
-7.0
-0.6
10
1.25
150
-55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
TA=25°C unless otherwise noted
Symbol
Conditions
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
Collector-Emitter Breakdown Voltage
(IC=-10mA, IB=0mA)
Collector-Base Breakdown Voltage
(IC=-100uA, IE=0mA)
Emitter-Base Breakdown Voltage
(IE=-100uA, IC=0mA)
Collector Cutoff Current
(VCE= -30V, IB=0mA)
Collector Cutoff Current
(VCB= -40V, IE=0mA)
Emitter Cutoff Current
(VEB= -6.0V, IC=0mA)
DC Current Gain
(IC= -1.0A, VCE=-2.0V)
DC Current Gain
(IC= -100mA, VCE=-2.0V)
Collector-Emitter Saturation Voltage
(IC= -2.0A, IB=-0.2mA)
Base-Emitter Saturation Voltage
(IC= -2.0A, IB=-0.2mA)
Current-Gain-Bandwidth Product
(IC= -0.1mA, VCE=-5.0V, f=10MHz)
Min
-30
-40
-5.0
-
-
-
60
32
-
-
-
Classification of hFE(1)
Rank
Range
R
60-120
O
100-200
TYP
-
-
-
-
-
-
-
-
-
-
80
Y
160-320
Max
-
-
-
-1.0
-1.0
-1.0
400
-
-0.5
-2.0
-
Unit
V
V
V
uA
uA
uA
-
-
V
V
MHz
GR
200-400
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