N-Channel MOSFET. GSM2320Y Datasheet

GSM2320Y MOSFET. Datasheet pdf. Equivalent

Part GSM2320Y
Description N-Channel MOSFET
Feature GSM2320Y 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field eff.
Manufacture Globaltech
Datasheet
Download GSM2320Y Datasheet

GSM2320Y 20V N-Channel MOSFETs Product Description These N- GSM2320Y Datasheet
Recommendation Recommendation Datasheet GSM2320Y Datasheet





GSM2320Y
GSM2320Y
20V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 20V, 800mA, RDS(ON)=300m@VGS=4.5V
„ Improved dv/dt capability
„ Fast switching
„ Suit for 1.5V Gate Drive Applications
„ Green Device Available
„ SOT-523 package design
Applications
„ Notebook
„ Load Switch
„ Hand-Held Instruments
„ Battery Protection
Packages & Pin Assignments
GSM2320YX7F (SOT-523)
Top Views
Pin Description
1 Gate
2 Source
3 Drain
Ordering Information
www.gs-power.com 1



GSM2320Y
Marking Information
Part Number
GSM2320YX7F
BYM
Package
SOT-523
Part Number
Date Code
GS Code
Part Marking
BYM
Quantity
3000pcs
Absolute Maximum Ratings
TC=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TC=25
TC=100
IDM Pulsed Drain Current
Power Dissipation (TC=25)
PD
Power Dissipation (Derate above 25)
TJ
TSTG
RθJA
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
20
±8
800
510
3.2
312
2.5
-55 to +150
-55 to +150
400
Unit
V
V
mA
A
mW
mW/
/W
www.gs-power.com
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)