N-Channel MOSFET. GSM2312P Datasheet

GSM2312P MOSFET. Datasheet pdf. Equivalent

Part GSM2312P
Description N-Channel MOSFET
Feature GSM2312P 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field eff.
Manufacture Globaltech
Datasheet
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GSM2312P 20V N-Channel MOSFETs Product Description These N- GSM2312P Datasheet
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GSM2312P
GSM2312P
20V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 20V, 6.7A, RDS(ON)=19m@VGS=4.5V
„ Improved dv/dt capability
„ Fast switching
„ Suit for 1.8V Gate Drive Applications
„ Green Device Available
„ SOT-23 package design
Applications
„ Notebook
„ Load Switch
„ Hand-Held Instruments
Packages & Pin Assignments
GSM2312PJZF (SOT-23)
Top Views
Pin Description
1 Gate
2 Source
3 Drain
Ordering Information
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GSM2312P
Marking Information
Part Number
GSM2312PJZF
Package
SOT-23
Part Marking
TYWMM
Quantity
3000pcs
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
RθJA
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
20
±10
6.7
4.2
26.8
1.56
0.012
-55 to +150
-55 to +150
80
Unit
V
V
A
A
W
W/
/W
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