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GSM3612P

Globaltech
Part Number GSM3612P
Manufacturer Globaltech
Description N-Channel MOSFET
Published Sep 9, 2018
Detailed Description GSM3612P 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are ...
Datasheet PDF File GSM3612P PDF File

GSM3612P
GSM3612P

Overview
GSM3612P 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features „ 30V, 5.
3A, RDS(ON)=32mΩ@VGS=4.
5V „ Improved dv/dt capability „ Fast switching „ Suit for 2.
5V Gate Drive Applications „ Green Device Available „ SOT-23 package design Applications „ Notebook „ Load Switch „ LED applications Packages & Pin Assignments GSM3612PJ...


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