N-Channel MOSFET. GSM3406AS Datasheet

GSM3406AS MOSFET. Datasheet pdf. Equivalent

Part GSM3406AS
Description N-Channel MOSFET
Feature 30V N-Channel Enhancement Mode MOSFET Product Description GSM3406AS, N-Channel enhancement mode MOS.
Manufacture Globaltech
Datasheet
Download GSM3406AS Datasheet

30V N-Channel Enhancement Mode MOSFET Product Description G GSM3406AS Datasheet
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GSM3406AS
30V N-Channel Enhancement Mode MOSFET
Product Description
GSM3406AS, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge. These
devices are particularly suited for low voltage
power management, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Features
„ 30V/2.8A,RDS(ON)=45m@VGS=10V
„ 30V/2.4A,RDS(ON)=55m@VGS=4.5V
„ Super high density cell design for extremely
low RDS (ON)
„ SOT-23 package design
Applications
„ Power Management in Note book
„ LED Display
„ DC-DC System
„ LCD Panel
Packages & Pin Assignments
GSM3406ASJZF(SOT-23)
1 Gate
2 Source
3 Drain
Ordering Information
GS P/N
GSM3406AS P F
Package Code
Halogen Free/
Pb Free Code
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GSM3406AS
Marking Information
Part Number
GSM3406ASJZF
Package
SOT-23
Absolute Maximum Ratings
(TA=25ºC unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25ºC
TA=70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25ºC
TA=70ºC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Part Marking
6SYW
Typical
30
±20
2.8
2.4
20
1.5
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
ºC
ºC
ºC/ W
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