N-Channel MOSFET. GSM3912P Datasheet

GSM3912P MOSFET. Datasheet pdf. Equivalent

Part GSM3912P
Description N-Channel MOSFET
Feature GSM3912P 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field eff.
Manufacture Globaltech
Datasheet
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GSM3912P 30V N-Channel MOSFETs Product Description These N- GSM3912P Datasheet
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GSM3912P
GSM3912P
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ 30V, 6.5A, RDS(ON)=24m@VGS=10V
„ Improved dv/dt capability
„ Fast switching
„ 100% EAS Guaranteed
„ Green Device Available
„ SOT-23 package design
Applications
„ MB / VGA / Vcore
„ Load Switch
„ Hand-Held Instrument
Packages & Pin Assignments
GSM3912PJZF (SOT-23)
Top Views
Pin Description
1 Gate
2 Source
3 Drain
Ordering Information
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GSM3912P
Marking Information
Part Number
GSM3912PJZF
Package
SOT-23
Part Marking
IYWMM
Quantity
3000pcs
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS
VGS
ID
IDM
EAS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanched Energy
TA=25
TA=100
IAS Single Pulse Avalanched Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ Operating Junction Temperature Range
TSTG
Storage Temperature Range
RθJA Thermal Resistance-Junction to Ambient
Typical
30
±20
6.5
4.1
26
32
8
1.56
0.012
-55 to +150
-55 to +150
80
Unit
V
V
A
A
mJ
A
W
W/
/W
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